Electrical characteristics of V                         2                         O                         5                          thin films formed on p-Si by sputter-deposition and rapid thermal annealing

M. H. Yoon; Seongil Im

doi:10.1016/j.apsusc.2004.10.100

Electrical characteristics of V ₂ O ₅ thin films formed on p-Si by sputter-deposition and rapid thermal annealing

M. H. Yoon, Seongil Im

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

We report on the formation of V ₂ O ₅ semiconductor thin films using rapid thermal annealing (RTA) on sputter-deposited amorphous VO _x . DC magnetron sputtering was used to obtain an initial amorphous VO _x film on p-Si substrate, followed by O ₂ - and N ₂ -RTA at two different temperatures of 400 and 500 °C for 3 min. According to X-ray diffraction results, O ₂ -RTA is more effective to achieve the semiconducting phase, V ₂ O ₅ than N ₂ -RTA, which caused some electrically conducting phases such as V ₄ O ₉ or V ₆ O ₁₃ at 400 °C. Electrical characterization on Au/vanadium oxide/p-Si structure exhibited ohmic-like behavior when the thin film mainly contains those metallic phases while the structures were strongly rectifying once the film consists of the semiconducting phase, V ₂ O ₅ .

Original language	English
Pages (from-to)	444-448
Number of pages	5
Journal	Applied Surface Science
Volume	244
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.10.100
Publication status	Published - 2005 May 15
Event	12th International Conference on Solid Films and Surfaces - Hammatsu, Japan Duration: 2004 Jun 21 → 2004 Jun 25

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2004.10.100

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Yoon, M. H., & Im, S. (2005). Electrical characteristics of V ₂ O ₅ thin films formed on p-Si by sputter-deposition and rapid thermal annealing Applied Surface Science, 244(1-4), 444-448. https://doi.org/10.1016/j.apsusc.2004.10.100

@article{6daa0f64156b4d4c8f9d9c347ee8a680,

title = " Electrical characteristics of V 2 O 5 thin films formed on p-Si by sputter-deposition and rapid thermal annealing ",

abstract = " We report on the formation of V 2 O 5 semiconductor thin films using rapid thermal annealing (RTA) on sputter-deposited amorphous VO x . DC magnetron sputtering was used to obtain an initial amorphous VO x film on p-Si substrate, followed by O 2 - and N 2 -RTA at two different temperatures of 400 and 500 °C for 3 min. According to X-ray diffraction results, O 2 -RTA is more effective to achieve the semiconducting phase, V 2 O 5 than N 2 -RTA, which caused some electrically conducting phases such as V 4 O 9 or V 6 O 13 at 400 °C. Electrical characterization on Au/vanadium oxide/p-Si structure exhibited ohmic-like behavior when the thin film mainly contains those metallic phases while the structures were strongly rectifying once the film consists of the semiconducting phase, V 2 O 5 .",

author = "Yoon, {M. H.} and Seongil Im",

year = "2005",

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day = "15",

doi = "10.1016/j.apsusc.2004.10.100",

language = "English",

volume = "244",

pages = "444--448",

journal = "Applied Surface Science",

issn = "0169-4332",

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note = "12th International Conference on Solid Films and Surfaces ; Conference date: 21-06-2004 Through 25-06-2004",

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Yoon, MH & Im, S 2005, ' Electrical characteristics of V ₂ O ₅ thin films formed on p-Si by sputter-deposition and rapid thermal annealing ', Applied Surface Science, vol. 244, no. 1-4, pp. 444-448. https://doi.org/10.1016/j.apsusc.2004.10.100

Electrical characteristics of V ₂ O ₅ thin films formed on p-Si by sputter-deposition and rapid thermal annealing . / Yoon, M. H.; Im, Seongil.
In: Applied Surface Science, Vol. 244, No. 1-4, 15.05.2005, p. 444-448.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Electrical characteristics of V 2 O 5 thin films formed on p-Si by sputter-deposition and rapid thermal annealing

AU - Yoon, M. H.

AU - Im, Seongil

PY - 2005/5/15

Y1 - 2005/5/15

N2 - We report on the formation of V 2 O 5 semiconductor thin films using rapid thermal annealing (RTA) on sputter-deposited amorphous VO x . DC magnetron sputtering was used to obtain an initial amorphous VO x film on p-Si substrate, followed by O 2 - and N 2 -RTA at two different temperatures of 400 and 500 °C for 3 min. According to X-ray diffraction results, O 2 -RTA is more effective to achieve the semiconducting phase, V 2 O 5 than N 2 -RTA, which caused some electrically conducting phases such as V 4 O 9 or V 6 O 13 at 400 °C. Electrical characterization on Au/vanadium oxide/p-Si structure exhibited ohmic-like behavior when the thin film mainly contains those metallic phases while the structures were strongly rectifying once the film consists of the semiconducting phase, V 2 O 5 .

AB - We report on the formation of V 2 O 5 semiconductor thin films using rapid thermal annealing (RTA) on sputter-deposited amorphous VO x . DC magnetron sputtering was used to obtain an initial amorphous VO x film on p-Si substrate, followed by O 2 - and N 2 -RTA at two different temperatures of 400 and 500 °C for 3 min. According to X-ray diffraction results, O 2 -RTA is more effective to achieve the semiconducting phase, V 2 O 5 than N 2 -RTA, which caused some electrically conducting phases such as V 4 O 9 or V 6 O 13 at 400 °C. Electrical characterization on Au/vanadium oxide/p-Si structure exhibited ohmic-like behavior when the thin film mainly contains those metallic phases while the structures were strongly rectifying once the film consists of the semiconducting phase, V 2 O 5 .

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SN - 0169-4332

VL - 244

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EP - 448

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

T2 - 12th International Conference on Solid Films and Surfaces

Y2 - 21 June 2004 through 25 June 2004

ER -

Electrical characteristics of V ₂ O ₅ thin films formed on p-Si by sputter-deposition and rapid thermal annealing

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