Electrical characteristics of solutionprocessed InGaZnO thin film transistors depending on Ga concentration

Gun Hee Kim; Woong Hee Jeong; Hyun Jae Kim

doi:10.1002/pssa.200983742

Electrical characteristics of solutionprocessed InGaZnO thin film transistors depending on Ga concentration

Gun Hee Kim, Woong Hee Jeong, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

92 Citations (Scopus)

Abstract

We investigated the role of Ga in solution-processed InGaZnO thin film transistors (TFTs). The incorporation of Ga into a InZnO compound system results in a decrease in the carrier concentration of the films and an off-current of TFTs. This is a result of the Ga ions forming stronger chemical bonds with oxygen, as compared to the Zn and In ions, acting as a carrier suppressor. It was verified, using X-ray photoelectron spectroscopy (XPS), that the vacancy-related oxygen 1s peak was decreased when the Ga content increased.

Original language	English
Pages (from-to)	1677-1679
Number of pages	3
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	207
Issue number	7
DOIs	https://doi.org/10.1002/pssa.200983742
Publication status	Published - 2010 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Surfaces and Interfaces

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10.1002/pssa.200983742

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@article{1900e4befb77496994299f7417faa5c0,

title = "Electrical characteristics of solutionprocessed InGaZnO thin film transistors depending on Ga concentration",

abstract = "We investigated the role of Ga in solution-processed InGaZnO thin film transistors (TFTs). The incorporation of Ga into a InZnO compound system results in a decrease in the carrier concentration of the films and an off-current of TFTs. This is a result of the Ga ions forming stronger chemical bonds with oxygen, as compared to the Zn and In ions, acting as a carrier suppressor. It was verified, using X-ray photoelectron spectroscopy (XPS), that the vacancy-related oxygen 1s peak was decreased when the Ga content increased.",

author = "Kim, {Gun Hee} and Jeong, {Woong Hee} and Kim, {Hyun Jae}",

year = "2010",

month = jul,

doi = "10.1002/pssa.200983742",

language = "English",

volume = "207",

pages = "1677--1679",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "7",

}

TY - JOUR

T1 - Electrical characteristics of solutionprocessed InGaZnO thin film transistors depending on Ga concentration

AU - Kim, Gun Hee

AU - Jeong, Woong Hee

AU - Kim, Hyun Jae

PY - 2010/7

Y1 - 2010/7

N2 - We investigated the role of Ga in solution-processed InGaZnO thin film transistors (TFTs). The incorporation of Ga into a InZnO compound system results in a decrease in the carrier concentration of the films and an off-current of TFTs. This is a result of the Ga ions forming stronger chemical bonds with oxygen, as compared to the Zn and In ions, acting as a carrier suppressor. It was verified, using X-ray photoelectron spectroscopy (XPS), that the vacancy-related oxygen 1s peak was decreased when the Ga content increased.

AB - We investigated the role of Ga in solution-processed InGaZnO thin film transistors (TFTs). The incorporation of Ga into a InZnO compound system results in a decrease in the carrier concentration of the films and an off-current of TFTs. This is a result of the Ga ions forming stronger chemical bonds with oxygen, as compared to the Zn and In ions, acting as a carrier suppressor. It was verified, using X-ray photoelectron spectroscopy (XPS), that the vacancy-related oxygen 1s peak was decreased when the Ga content increased.

UR - http://www.scopus.com/inward/record.url?scp=77955598327&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955598327&partnerID=8YFLogxK

U2 - 10.1002/pssa.200983742

DO - 10.1002/pssa.200983742

M3 - Article

AN - SCOPUS:77955598327

SN - 1862-6300

VL - 207

SP - 1677

EP - 1679

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 7

ER -

Electrical characteristics of solutionprocessed InGaZnO thin film transistors depending on Ga concentration

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