Abstract
To improve silicon field emitter, Ti and Co silicides were formed on silicon tips. Silicides were produced by deposition of metal (Ti and Co) and subsequent annealing. I-V characteristics of as-grown silicon tips and silicide emitters were investigated. Turn-on voltage and emission current of silicon tips were 220 V and 10-8 A, respectively. Ti and Co silicide lowered turn-on voltage significantly. The emission current of Ti and Co silicide emitters were 140 V and 180 V, respectively. Both silicides increased emission current to order of 10-7 A. Ti and Co silicide emitters have enhanced field emission of silicon tips due to large emitting area and lower work function, respectively.
| Original language | English |
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| Pages | 188-191 |
| Number of pages | 4 |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 1996 Jul 7 → 1996 Jul 12 |
Other
| Other | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC |
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| City | St.Petersburg, Russia |
| Period | 96/7/7 → 96/7/12 |
All Science Journal Classification (ASJC) codes
- Surfaces and Interfaces