Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size

Sang Hoon Lee; Tae Il Lee; Su Jeong Lee; Sang Myung Lee; Ilgu Yun; Jae Min Myoung

doi:10.1021/am507478q

Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size

Sang Hoon Lee, Tae Il Lee, Su Jeong Lee, Sang Myung Lee, Ilgu Yun, Jae Min Myoung

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The dependence of electrical properties of rough and cylindrical Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted etching (MCE) on the size of the NW's diameter was demonstrated. Using a decal-printing and transfer process assisted by Al₂O₃ sacrificial layer, the Si NW field effect transistor (FET) embedded in a polyvinylphenol adhesive and dielectric layer were fabricated. As the diameter of Si NW increased, the mobility of FET increased from 80.51 to 170.95 cm²/V·s and the threshold voltage moved from -7.17 to 0 V because phonon-electron wave function overlaps, surface scattering, and defect scattering decreased and gate coupling increased as the ratio of surface-to-volume got reduced.

Original language	English
Pages (from-to)	929-934
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	7
Issue number	1
DOIs	https://doi.org/10.1021/am507478q
Publication status	Published - 2015 Jan 14

Bibliographical note

Publisher Copyright:
© 2014 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1021/am507478q

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title = "Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size",

abstract = "The dependence of electrical properties of rough and cylindrical Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted etching (MCE) on the size of the NW's diameter was demonstrated. Using a decal-printing and transfer process assisted by Al2O3 sacrificial layer, the Si NW field effect transistor (FET) embedded in a polyvinylphenol adhesive and dielectric layer were fabricated. As the diameter of Si NW increased, the mobility of FET increased from 80.51 to 170.95 cm2/V·s and the threshold voltage moved from -7.17 to 0 V because phonon-electron wave function overlaps, surface scattering, and defect scattering decreased and gate coupling increased as the ratio of surface-to-volume got reduced.",

author = "Lee, {Sang Hoon} and Lee, {Tae Il} and Lee, {Su Jeong} and Lee, {Sang Myung} and Ilgu Yun and Myoung, {Jae Min}",

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AU - Lee, Sang Hoon

AU - Lee, Tae Il

AU - Lee, Su Jeong

AU - Lee, Sang Myung

AU - Yun, Ilgu

AU - Myoung, Jae Min

PY - 2015/1/14

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N2 - The dependence of electrical properties of rough and cylindrical Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted etching (MCE) on the size of the NW's diameter was demonstrated. Using a decal-printing and transfer process assisted by Al2O3 sacrificial layer, the Si NW field effect transistor (FET) embedded in a polyvinylphenol adhesive and dielectric layer were fabricated. As the diameter of Si NW increased, the mobility of FET increased from 80.51 to 170.95 cm2/V·s and the threshold voltage moved from -7.17 to 0 V because phonon-electron wave function overlaps, surface scattering, and defect scattering decreased and gate coupling increased as the ratio of surface-to-volume got reduced.

AB - The dependence of electrical properties of rough and cylindrical Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted etching (MCE) on the size of the NW's diameter was demonstrated. Using a decal-printing and transfer process assisted by Al2O3 sacrificial layer, the Si NW field effect transistor (FET) embedded in a polyvinylphenol adhesive and dielectric layer were fabricated. As the diameter of Si NW increased, the mobility of FET increased from 80.51 to 170.95 cm2/V·s and the threshold voltage moved from -7.17 to 0 V because phonon-electron wave function overlaps, surface scattering, and defect scattering decreased and gate coupling increased as the ratio of surface-to-volume got reduced.

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Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size

Abstract

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