Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

Chee Hong An, Chandreswar Mahata, Young Chul Byun, Myung Soo Lee, Yu Seon Kang, Mann Ho Cho, Hyoungsub Kim

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.

Original languageEnglish
Pages (from-to)1381-1385
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number7
Publication statusPublished - 2013 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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