Electrical characteristics and pH response of a parylene-H sensing membrane in a Si-nanonet ion-sensitive field-effect transistor

Bo Jin; Ga Yeon Lee; Chanoh Park; Donghoon Kim; Wonyeong Choi; Jae Woo Yoo; Jae Chul Pyun; Jeong Soo Lee

doi:10.3390/s18113892

Electrical characteristics and pH response of a parylene-H sensing membrane in a Si-nanonet ion-sensitive field-effect transistor

Bo Jin, Ga Yeon Lee, Chanoh Park, Donghoon Kim, Wonyeong Choi, Jae Woo Yoo, Jae Chul Pyun, Jeong Soo Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report the electrical characteristics and pH responses of a Si-nanonet ion-sensitive field-effect transistor with ultra-thin parylene-H as a gate sensing membrane. The fabricated device shows excellent DC characteristics: a low subthreshold swing of 85 mV/dec, a high current on/off ratio of ~10⁷ and a low gate leakage current of ~10⁻¹⁰ A. The low interface trap density of 1.04 × 10¹² cm⁻² and high field-effect mobility of 510 cm² V⁻¹ s⁻¹ were obtained. The pH responses of the devices were evaluated in various pH buffer solutions. A high pH sensitivity of 48.1 ± 0.5 mV/pH with a device-to-device variation of ~6.1% was achieved. From the low-frequency noise characterization, the signal-to-noise ratio was extracted as high as ~3400 A/A with the lowest noise equivalent pH value of ~0.002 pH. These excellent intrinsic electrical and pH sensing performances suggest that parylene-H can be promising as a sensing membrane in an ISFET-based biosensor platform.

Original language	English
Article number	3892
Journal	Sensors (Switzerland)
Volume	18
Issue number	11
DOIs	https://doi.org/10.3390/s18113892
Publication status	Published - 2018 Nov 12

Bibliographical note

Funding Information:
This work was supported by Nano Convergence Foundation (www.nanotech2020.org) funded by the Ministry of Science, ICT and Future Planning (Korea) and the Ministry of Trade, Industry and Energy (MOTIE, Korea) (Commercialization of Si nano nanonet FET biosensor for influenza diagnostic), by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2009-0082580) and by Korea Institute of Planning and Evaluation for Technology in Food, Agriculture, Forestry and Fisheries(IPET) through Animal Disease Management Technology Development Program, funded by Ministry of Agriculture, Food and Rural Affairs(MAFRA)(grant no.116167-3).

Publisher Copyright:
© 2018 by the authors. Licensee MDPI, Basel, Switzerland.

All Science Journal Classification (ASJC) codes

Analytical Chemistry
Information Systems
Atomic and Molecular Physics, and Optics
Biochemistry
Instrumentation
Electrical and Electronic Engineering

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10.3390/s18113892

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title = "Electrical characteristics and pH response of a parylene-H sensing membrane in a Si-nanonet ion-sensitive field-effect transistor",

abstract = "We report the electrical characteristics and pH responses of a Si-nanonet ion-sensitive field-effect transistor with ultra-thin parylene-H as a gate sensing membrane. The fabricated device shows excellent DC characteristics: a low subthreshold swing of 85 mV/dec, a high current on/off ratio of ~107 and a low gate leakage current of ~10−10 A. The low interface trap density of 1.04 × 1012 cm−2 and high field-effect mobility of 510 cm2 V−1 s−1 were obtained. The pH responses of the devices were evaluated in various pH buffer solutions. A high pH sensitivity of 48.1 ± 0.5 mV/pH with a device-to-device variation of ~6.1% was achieved. From the low-frequency noise characterization, the signal-to-noise ratio was extracted as high as ~3400 A/A with the lowest noise equivalent pH value of ~0.002 pH. These excellent intrinsic electrical and pH sensing performances suggest that parylene-H can be promising as a sensing membrane in an ISFET-based biosensor platform.",

author = "Bo Jin and Lee, {Ga Yeon} and Chanoh Park and Donghoon Kim and Wonyeong Choi and Yoo, {Jae Woo} and Pyun, {Jae Chul} and Lee, {Jeong Soo}",

note = "Funding Information: This work was supported by Nano Convergence Foundation (www.nanotech2020.org) funded by the Ministry of Science, ICT and Future Planning (Korea) and the Ministry of Trade, Industry and Energy (MOTIE, Korea) (Commercialization of Si nano nanonet FET biosensor for influenza diagnostic), by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2009-0082580) and by Korea Institute of Planning and Evaluation for Technology in Food, Agriculture, Forestry and Fisheries(IPET) through Animal Disease Management Technology Development Program, funded by Ministry of Agriculture, Food and Rural Affairs(MAFRA)(grant no.116167-3). Publisher Copyright: {\textcopyright} 2018 by the authors. Licensee MDPI, Basel, Switzerland.",

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AU - Jin, Bo

AU - Lee, Ga Yeon

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AU - Choi, Wonyeong

AU - Yoo, Jae Woo

AU - Pyun, Jae Chul

AU - Lee, Jeong Soo

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PY - 2018/11/12

Y1 - 2018/11/12

N2 - We report the electrical characteristics and pH responses of a Si-nanonet ion-sensitive field-effect transistor with ultra-thin parylene-H as a gate sensing membrane. The fabricated device shows excellent DC characteristics: a low subthreshold swing of 85 mV/dec, a high current on/off ratio of ~107 and a low gate leakage current of ~10−10 A. The low interface trap density of 1.04 × 1012 cm−2 and high field-effect mobility of 510 cm2 V−1 s−1 were obtained. The pH responses of the devices were evaluated in various pH buffer solutions. A high pH sensitivity of 48.1 ± 0.5 mV/pH with a device-to-device variation of ~6.1% was achieved. From the low-frequency noise characterization, the signal-to-noise ratio was extracted as high as ~3400 A/A with the lowest noise equivalent pH value of ~0.002 pH. These excellent intrinsic electrical and pH sensing performances suggest that parylene-H can be promising as a sensing membrane in an ISFET-based biosensor platform.

AB - We report the electrical characteristics and pH responses of a Si-nanonet ion-sensitive field-effect transistor with ultra-thin parylene-H as a gate sensing membrane. The fabricated device shows excellent DC characteristics: a low subthreshold swing of 85 mV/dec, a high current on/off ratio of ~107 and a low gate leakage current of ~10−10 A. The low interface trap density of 1.04 × 1012 cm−2 and high field-effect mobility of 510 cm2 V−1 s−1 were obtained. The pH responses of the devices were evaluated in various pH buffer solutions. A high pH sensitivity of 48.1 ± 0.5 mV/pH with a device-to-device variation of ~6.1% was achieved. From the low-frequency noise characterization, the signal-to-noise ratio was extracted as high as ~3400 A/A with the lowest noise equivalent pH value of ~0.002 pH. These excellent intrinsic electrical and pH sensing performances suggest that parylene-H can be promising as a sensing membrane in an ISFET-based biosensor platform.

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Electrical characteristics and pH response of a parylene-H sensing membrane in a Si-nanonet ion-sensitive field-effect transistor

Abstract

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