Electrical and thermal stress analysis of In2O 3-Ga2O3-ZnO thin-film transistors

Mami Fujii; Tomoki Maruyama; Masahiro Horita; Kiyoshi Uchiyama; Ji Sim Jung; Jang Yeon Kwon; Yukiharu Uraoka

Electrical and thermal stress analysis of In₂O ₃-Ga₂O₃-ZnO thin-film transistors

Mami Fujii, Tomoki Maruyama, Masahiro Horita, Kiyoshi Uchiyama, Ji Sim Jung, Jang Yeon Kwon, Yukiharu Uraoka

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Degradation of In₂O₃-Ga₂O₃-ZnO (IGZO) thin-film transistors (TFTs)) was studied. We evaluated degradation caused by applying gate voltage and drain voltage stress. A parallel shift of the transfer curve was observed under gate voltage stress. Joule heating caused by the drain current was observed. We tried to reproduce this degradation of the transfer curve change by device simulation. When we assumed the trap level as the density of state (DOS) model and increased two kinds of trap density, we obtained properties that show the same trends as the experimental results. We concluded that two degradation mechanisms occur under gate and drain voltage stress conditions. And then, we tried to improve the TFT characteristics using high pressure water vapor (HPV) annealing. We also found that the cooling conditions after HPV annealing affect the IGZO TFT characteristics.

Original language	English
Title of host publication	Zinc Oxide and Related Materials - 2009
Pages	93-98
Number of pages	6
Publication status	Published - 2010
Event	2009 MRS Fall Meeting - Boston, MA, United States Duration: 2009 Nov 30 → 2009 Dec 4

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1201
ISSN (Print)	0272-9172

Other

Other	2009 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	09/11/30 → 09/12/4

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{dda1deb722964850a93f8a1f3983eb82,

title = "Electrical and thermal stress analysis of In2O 3-Ga2O3-ZnO thin-film transistors",

abstract = "Degradation of In2O3-Ga2O3-ZnO (IGZO) thin-film transistors (TFTs)) was studied. We evaluated degradation caused by applying gate voltage and drain voltage stress. A parallel shift of the transfer curve was observed under gate voltage stress. Joule heating caused by the drain current was observed. We tried to reproduce this degradation of the transfer curve change by device simulation. When we assumed the trap level as the density of state (DOS) model and increased two kinds of trap density, we obtained properties that show the same trends as the experimental results. We concluded that two degradation mechanisms occur under gate and drain voltage stress conditions. And then, we tried to improve the TFT characteristics using high pressure water vapor (HPV) annealing. We also found that the cooling conditions after HPV annealing affect the IGZO TFT characteristics.",

author = "Mami Fujii and Tomoki Maruyama and Masahiro Horita and Kiyoshi Uchiyama and Jung, {Ji Sim} and Kwon, {Jang Yeon} and Yukiharu Uraoka",

year = "2010",

language = "English",

isbn = "9781605111742",

series = "Materials Research Society Symposium Proceedings",

pages = "93--98",

booktitle = "Zinc Oxide and Related Materials - 2009",

note = "2009 MRS Fall Meeting ; Conference date: 30-11-2009 Through 04-12-2009",

}

TY - GEN

T1 - Electrical and thermal stress analysis of In2O 3-Ga2O3-ZnO thin-film transistors

AU - Fujii, Mami

AU - Maruyama, Tomoki

AU - Horita, Masahiro

AU - Uchiyama, Kiyoshi

AU - Jung, Ji Sim

AU - Kwon, Jang Yeon

AU - Uraoka, Yukiharu

PY - 2010

Y1 - 2010

N2 - Degradation of In2O3-Ga2O3-ZnO (IGZO) thin-film transistors (TFTs)) was studied. We evaluated degradation caused by applying gate voltage and drain voltage stress. A parallel shift of the transfer curve was observed under gate voltage stress. Joule heating caused by the drain current was observed. We tried to reproduce this degradation of the transfer curve change by device simulation. When we assumed the trap level as the density of state (DOS) model and increased two kinds of trap density, we obtained properties that show the same trends as the experimental results. We concluded that two degradation mechanisms occur under gate and drain voltage stress conditions. And then, we tried to improve the TFT characteristics using high pressure water vapor (HPV) annealing. We also found that the cooling conditions after HPV annealing affect the IGZO TFT characteristics.

AB - Degradation of In2O3-Ga2O3-ZnO (IGZO) thin-film transistors (TFTs)) was studied. We evaluated degradation caused by applying gate voltage and drain voltage stress. A parallel shift of the transfer curve was observed under gate voltage stress. Joule heating caused by the drain current was observed. We tried to reproduce this degradation of the transfer curve change by device simulation. When we assumed the trap level as the density of state (DOS) model and increased two kinds of trap density, we obtained properties that show the same trends as the experimental results. We concluded that two degradation mechanisms occur under gate and drain voltage stress conditions. And then, we tried to improve the TFT characteristics using high pressure water vapor (HPV) annealing. We also found that the cooling conditions after HPV annealing affect the IGZO TFT characteristics.

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M3 - Conference contribution

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T3 - Materials Research Society Symposium Proceedings

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BT - Zinc Oxide and Related Materials - 2009

T2 - 2009 MRS Fall Meeting

Y2 - 30 November 2009 through 4 December 2009

ER -