Electrical and physical properties of HfO2 deposited via ALD using Hf(OtBu)4 and ozone atop Al2O3

H. S. Chang; S. K. Back; H. Park; H. Hwang; J. H. Oh; W. S. Shin; J. H. Yeo; K. H. Hwang; S. W. Nam; H. D. Lee; C. L. Song; D. W. Moon; M. H. Cho

doi:10.1149/1.1707031

Electrical and physical properties of HfO₂ deposited via ALD using Hf(OtBu)₄ and ozone atop Al₂O₃

H. S. Chang, S. K. Back, H. Park, H. Hwang, J. H. Oh, W. S. Shin, J. H. Yeo, K. H. Hwang, S. W. Nam, H. D. Lee, C. L. Song, D. W. Moon, M. H. Cho

Department of Physics

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

HfO₂ films were deposited via Hf(OtBu)₄ precursor and ozone oxidant using atomic layer deposition (ALD) atop Al₂O ₃. We report the impact of annealing conditions on the physical and electrical properties of a HfO₂ on Al₂O₃ /SiN/Si substrate using medium-energy ion scattering spectroscopy, high-resolution transmission electron microscopy, thermal desorption spectra, and electrical measurements. Annealing temperatures influence the microstructure and impurity levels of Hf(OtBu)₄HfO₂/Al₂O ₃/SiN films. The leakage currents of Al₂O ₃-HfO₂ bilayer were decreased with the increase of annealing temperature and the structures of the bilayer did not break until 850°C. This change was closely related to the reduction of carbon and organic contamination during annealing. However, annealing at 950°C drastically degraded electrical properties due to the intermixing of the HfO₂-Al₂O₃ bilayer structure.

Original language	English
Pages (from-to)	F42-F44
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	6
DOIs	https://doi.org/10.1149/1.1707031
Publication status	Published - 2004

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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@article{b849553cef7441dc94ea514ad5a30436,

title = "Electrical and physical properties of HfO2 deposited via ALD using Hf(OtBu)4 and ozone atop Al2O3",

abstract = "HfO2 films were deposited via Hf(OtBu)4 precursor and ozone oxidant using atomic layer deposition (ALD) atop Al2O 3. We report the impact of annealing conditions on the physical and electrical properties of a HfO2 on Al2O3 /SiN/Si substrate using medium-energy ion scattering spectroscopy, high-resolution transmission electron microscopy, thermal desorption spectra, and electrical measurements. Annealing temperatures influence the microstructure and impurity levels of Hf(OtBu)4HfO2/Al2O 3/SiN films. The leakage currents of Al2O 3-HfO2 bilayer were decreased with the increase of annealing temperature and the structures of the bilayer did not break until 850°C. This change was closely related to the reduction of carbon and organic contamination during annealing. However, annealing at 950°C drastically degraded electrical properties due to the intermixing of the HfO2-Al2O3 bilayer structure.",

author = "Chang, {H. S.} and Back, {S. K.} and H. Park and H. Hwang and Oh, {J. H.} and Shin, {W. S.} and Yeo, {J. H.} and Hwang, {K. H.} and Nam, {S. W.} and Lee, {H. D.} and Song, {C. L.} and Moon, {D. W.} and Cho, {M. H.}",

year = "2004",

doi = "10.1149/1.1707031",

language = "English",

volume = "7",

pages = "F42--F44",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "6",

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TY - JOUR

T1 - Electrical and physical properties of HfO2 deposited via ALD using Hf(OtBu)4 and ozone atop Al2O3

AU - Chang, H. S.

AU - Back, S. K.

AU - Park, H.

AU - Hwang, H.

AU - Oh, J. H.

AU - Shin, W. S.

AU - Yeo, J. H.

AU - Hwang, K. H.

AU - Nam, S. W.

AU - Lee, H. D.

AU - Song, C. L.

AU - Moon, D. W.

AU - Cho, M. H.

PY - 2004

Y1 - 2004

N2 - HfO2 films were deposited via Hf(OtBu)4 precursor and ozone oxidant using atomic layer deposition (ALD) atop Al2O 3. We report the impact of annealing conditions on the physical and electrical properties of a HfO2 on Al2O3 /SiN/Si substrate using medium-energy ion scattering spectroscopy, high-resolution transmission electron microscopy, thermal desorption spectra, and electrical measurements. Annealing temperatures influence the microstructure and impurity levels of Hf(OtBu)4HfO2/Al2O 3/SiN films. The leakage currents of Al2O 3-HfO2 bilayer were decreased with the increase of annealing temperature and the structures of the bilayer did not break until 850°C. This change was closely related to the reduction of carbon and organic contamination during annealing. However, annealing at 950°C drastically degraded electrical properties due to the intermixing of the HfO2-Al2O3 bilayer structure.

AB - HfO2 films were deposited via Hf(OtBu)4 precursor and ozone oxidant using atomic layer deposition (ALD) atop Al2O 3. We report the impact of annealing conditions on the physical and electrical properties of a HfO2 on Al2O3 /SiN/Si substrate using medium-energy ion scattering spectroscopy, high-resolution transmission electron microscopy, thermal desorption spectra, and electrical measurements. Annealing temperatures influence the microstructure and impurity levels of Hf(OtBu)4HfO2/Al2O 3/SiN films. The leakage currents of Al2O 3-HfO2 bilayer were decreased with the increase of annealing temperature and the structures of the bilayer did not break until 850°C. This change was closely related to the reduction of carbon and organic contamination during annealing. However, annealing at 950°C drastically degraded electrical properties due to the intermixing of the HfO2-Al2O3 bilayer structure.

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DO - 10.1149/1.1707031

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SN - 1099-0062

VL - 7

SP - F42-F44

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -

Electrical and physical properties of HfO₂ deposited via ALD using Hf(OtBu)₄ and ozone atop Al₂O₃

Abstract

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