Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure

Min Ji Park; Young Wook Chang; Bong Keun Kang; Min Soo Son; Jae Sang Lee; Sang Yeol Lee; Kyung Hwa Yoo

doi:10.1109/INEC.2010.5424960

Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure

Min Ji Park, Young Wook Chang, Bong Keun Kang, Min Soo Son, Jae Sang Lee, Sang Yeol Lee, Kyung Hwa Yoo

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have fabricated p-SWNT/n-ZnO heterojunctions and investigated their electrical and photoelectrical properties. The I-V curves measured across junctions exhibited diode rectifying behaviors, while the I-V curves measured for individual SWNT or ZnO were linear. In addition, we also investigated photoresponsive behaviors for these heterojunctions.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	1195-1196
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424960
Publication status	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	10/1/3 → 10/1/8

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/INEC.2010.5424960

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Park, M. J., Chang, Y. W., Kang, B. K., Son, M. S., Lee, J. S., Lee, S. Y., & Yoo, K. H. (2010). Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1195-1196). [5424960] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424960

@inproceedings{6b8c7f7692f54300895bb264b4516cd4,

title = "Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure",

abstract = "We have fabricated p-SWNT/n-ZnO heterojunctions and investigated their electrical and photoelectrical properties. The I-V curves measured across junctions exhibited diode rectifying behaviors, while the I-V curves measured for individual SWNT or ZnO were linear. In addition, we also investigated photoresponsive behaviors for these heterojunctions.",

author = "Park, {Min Ji} and Chang, {Young Wook} and Kang, {Bong Keun} and Son, {Min Soo} and Lee, {Jae Sang} and Lee, {Sang Yeol} and Yoo, {Kyung Hwa}",

year = "2010",

doi = "10.1109/INEC.2010.5424960",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "1195--1196",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Park, MJ, Chang, YW, Kang, BK, Son, MS, Lee, JS, Lee, SY & Yoo, KH 2010, Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424960, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 1195-1196, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424960

Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure. / Park, Min Ji; Chang, Young Wook; Kang, Bong Keun et al.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1195-1196 5424960 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure

AU - Park, Min Ji

AU - Chang, Young Wook

AU - Kang, Bong Keun

AU - Son, Min Soo

AU - Lee, Jae Sang

AU - Lee, Sang Yeol

AU - Yoo, Kyung Hwa

PY - 2010

Y1 - 2010

N2 - We have fabricated p-SWNT/n-ZnO heterojunctions and investigated their electrical and photoelectrical properties. The I-V curves measured across junctions exhibited diode rectifying behaviors, while the I-V curves measured for individual SWNT or ZnO were linear. In addition, we also investigated photoresponsive behaviors for these heterojunctions.

AB - We have fabricated p-SWNT/n-ZnO heterojunctions and investigated their electrical and photoelectrical properties. The I-V curves measured across junctions exhibited diode rectifying behaviors, while the I-V curves measured for individual SWNT or ZnO were linear. In addition, we also investigated photoresponsive behaviors for these heterojunctions.

UR - http://www.scopus.com/inward/record.url?scp=77951654323&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951654323&partnerID=8YFLogxK

U2 - 10.1109/INEC.2010.5424960

DO - 10.1109/INEC.2010.5424960

M3 - Conference contribution

AN - SCOPUS:77951654323

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 1195

EP - 1196

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

ER -

Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure

Abstract

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