Electrical and optical properties of indium zinc oxide (IZO) thin films by continuous composition spread

J. J. Lee; J. S. Kim; S. J. Yoon; Y. S. Cho; J. W. Choi

doi:10.1166/jnn.2013.7274

Electrical and optical properties of indium zinc oxide (IZO) thin films by continuous composition spread

J. J. Lee, J. S. Kim, S. J. Yoon, Y. S. Cho, J. W. Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Indium zinc oxide (IZO) films were deposited on glass substrate at room temperature using off-axis RF sputtering-continuous composition spread (CCS) system. The full range composition of IZO films were controlled by the deposition rate and thickness profiles of In₂O₃ and ZnO target. The structural, electrical and optical properties of IZO thin films were measured as functions of position. IZO thin film had the lowest resistivity and highest carrier concentration at the position of 15 mm (5.02 × 10 ^-4 Ω cm, 3.9 × 10²⁰/cm³). And IZO thin film had high transmittance in visible region at measured all positions. This study has investigated to explore the new composition of IZO films using CCS system.

Original language	English
Pages (from-to)	3317-3320
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	13
Issue number	5
DOIs	https://doi.org/10.1166/jnn.2013.7274
Publication status	Published - 2013 May

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1166/jnn.2013.7274

Cite this

@article{c3d54ad33f82406ca8750083e8b650ae,

title = "Electrical and optical properties of indium zinc oxide (IZO) thin films by continuous composition spread",

abstract = "Indium zinc oxide (IZO) films were deposited on glass substrate at room temperature using off-axis RF sputtering-continuous composition spread (CCS) system. The full range composition of IZO films were controlled by the deposition rate and thickness profiles of In2O3 and ZnO target. The structural, electrical and optical properties of IZO thin films were measured as functions of position. IZO thin film had the lowest resistivity and highest carrier concentration at the position of 15 mm (5.02 × 10 -4 Ω cm, 3.9 × 1020/cm3). And IZO thin film had high transmittance in visible region at measured all positions. This study has investigated to explore the new composition of IZO films using CCS system.",

author = "Lee, {J. J.} and Kim, {J. S.} and Yoon, {S. J.} and Cho, {Y. S.} and Choi, {J. W.}",

year = "2013",

month = may,

doi = "10.1166/jnn.2013.7274",

language = "English",

volume = "13",

pages = "3317--3320",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "5",

}

TY - JOUR

T1 - Electrical and optical properties of indium zinc oxide (IZO) thin films by continuous composition spread

AU - Lee, J. J.

AU - Kim, J. S.

AU - Yoon, S. J.

AU - Cho, Y. S.

AU - Choi, J. W.

PY - 2013/5

Y1 - 2013/5

N2 - Indium zinc oxide (IZO) films were deposited on glass substrate at room temperature using off-axis RF sputtering-continuous composition spread (CCS) system. The full range composition of IZO films were controlled by the deposition rate and thickness profiles of In2O3 and ZnO target. The structural, electrical and optical properties of IZO thin films were measured as functions of position. IZO thin film had the lowest resistivity and highest carrier concentration at the position of 15 mm (5.02 × 10 -4 Ω cm, 3.9 × 1020/cm3). And IZO thin film had high transmittance in visible region at measured all positions. This study has investigated to explore the new composition of IZO films using CCS system.

AB - Indium zinc oxide (IZO) films were deposited on glass substrate at room temperature using off-axis RF sputtering-continuous composition spread (CCS) system. The full range composition of IZO films were controlled by the deposition rate and thickness profiles of In2O3 and ZnO target. The structural, electrical and optical properties of IZO thin films were measured as functions of position. IZO thin film had the lowest resistivity and highest carrier concentration at the position of 15 mm (5.02 × 10 -4 Ω cm, 3.9 × 1020/cm3). And IZO thin film had high transmittance in visible region at measured all positions. This study has investigated to explore the new composition of IZO films using CCS system.

UR - http://www.scopus.com/inward/record.url?scp=84876925488&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876925488&partnerID=8YFLogxK

U2 - 10.1166/jnn.2013.7274

DO - 10.1166/jnn.2013.7274

M3 - Article

C2 - 23858851

AN - SCOPUS:84876925488

SN - 1533-4880

VL - 13

SP - 3317

EP - 3320

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 5

ER -

Electrical and optical properties of indium zinc oxide (IZO) thin films by continuous composition spread

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this