Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distribution

Sung Ho Hwang; Jung Il Lee; Jin Dong Song; Won Jun Choi; Il Ki Han; Soo Kyung Chang

doi:10.4028/0-87849-958-x.1023

Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distribution

Sung Ho Hwang, Jung Il Lee, Jin Dong Song, Won Jun Choi, Il Ki Han, Soo Kyung Chang

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.

Original language	English
Pages (from-to)	1023-1028
Number of pages	6
Journal	Key Engineering Materials
Volume	277-279
Issue number	I
DOIs	https://doi.org/10.4028/0-87849-958-x.1023
Publication status	Published - 2005

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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@article{e2a1f91f93fb4a1fa0944265ec866915,

title = "Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distribution",

abstract = "We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.",

author = "Hwang, {Sung Ho} and Lee, {Jung Il} and Song, {Jin Dong} and Choi, {Won Jun} and Han, {Il Ki} and Chang, {Soo Kyung}",

year = "2005",

doi = "10.4028/0-87849-958-x.1023",

language = "English",

volume = "277-279",

pages = "1023--1028",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications",

number = "I",

}

TY - JOUR

T1 - Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distribution

AU - Hwang, Sung Ho

AU - Lee, Jung Il

AU - Song, Jin Dong

AU - Choi, Won Jun

AU - Han, Il Ki

AU - Chang, Soo Kyung

PY - 2005

Y1 - 2005

N2 - We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.

AB - We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.

UR - http://www.scopus.com/inward/record.url?scp=33646425328&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646425328&partnerID=8YFLogxK

U2 - 10.4028/0-87849-958-x.1023

DO - 10.4028/0-87849-958-x.1023

M3 - Article

AN - SCOPUS:33646425328

SN - 1013-9826

VL - 277-279

SP - 1023

EP - 1028

JO - Key Engineering Materials

JF - Key Engineering Materials

IS - I

ER -

Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distribution

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