Electrical activation of phosphorus in highly P-doped epitaxial silicon thin films

Minhyeong Lee, Sun Wook Kim, Eunjung Ko, Hyunchul Jang, Sangmo Koo, Dae Hong Ko

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


For the application of 2D/3D nMOSFET transistors, highly phosphorus-doped epitaxial silicon thin films were grown on Si (100) substrates by using a RPCVD system. For the highly P-doped Si films, we suggest a modified impurity distribution function as a function of phosphorous concentration, and characterize the electrical activation of phosphorous dopants in the films. Calculated values with the model are in good agreement with experiment results by Hall Effect measurements and secondary ion mass spectroscopy analyses.

Original languageEnglish
Pages (from-to)3365-3369
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Issue number5
Publication statusPublished - 2017

Bibliographical note

Publisher Copyright:
© Copyright 2017 American Scientific Publishers All rights reserved.

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics


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