Electrical activation of phosphorus in highly P-doped epitaxial silicon thin films

Minhyeong Lee; Sun Wook Kim; Eunjung Ko; Hyunchul Jang; Sangmo Koo; Dae Hong Ko

doi:10.1166/jnn.2017.14019

Electrical activation of phosphorus in highly P-doped epitaxial silicon thin films

Minhyeong Lee, Sun Wook Kim, Eunjung Ko, Hyunchul Jang, Sangmo Koo, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

For the application of 2D/3D nMOSFET transistors, highly phosphorus-doped epitaxial silicon thin films were grown on Si (100) substrates by using a RPCVD system. For the highly P-doped Si films, we suggest a modified impurity distribution function as a function of phosphorous concentration, and characterize the electrical activation of phosphorous dopants in the films. Calculated values with the model are in good agreement with experiment results by Hall Effect measurements and secondary ion mass spectroscopy analyses.

Original language	English
Pages (from-to)	3365-3369
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	5
DOIs	https://doi.org/10.1166/jnn.2017.14019
Publication status	Published - 2017

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© Copyright 2017 American Scientific Publishers All rights reserved.

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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title = "Electrical activation of phosphorus in highly P-doped epitaxial silicon thin films",

abstract = "For the application of 2D/3D nMOSFET transistors, highly phosphorus-doped epitaxial silicon thin films were grown on Si (100) substrates by using a RPCVD system. For the highly P-doped Si films, we suggest a modified impurity distribution function as a function of phosphorous concentration, and characterize the electrical activation of phosphorous dopants in the films. Calculated values with the model are in good agreement with experiment results by Hall Effect measurements and secondary ion mass spectroscopy analyses.",

keywords = "Dopant Activation, Epitaxial Growth, In-Situ Phosphorus Doping",

author = "Minhyeong Lee and Kim, {Sun Wook} and Eunjung Ko and Hyunchul Jang and Sangmo Koo and Ko, {Dae Hong}",

year = "2017",

doi = "10.1166/jnn.2017.14019",

language = "English",

volume = "17",

pages = "3365--3369",

journal = "Journal of Nanoscience and Nanotechnology",

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T1 - Electrical activation of phosphorus in highly P-doped epitaxial silicon thin films

AU - Lee, Minhyeong

AU - Kim, Sun Wook

AU - Ko, Eunjung

AU - Jang, Hyunchul

AU - Koo, Sangmo

AU - Ko, Dae Hong

PY - 2017

Y1 - 2017

N2 - For the application of 2D/3D nMOSFET transistors, highly phosphorus-doped epitaxial silicon thin films were grown on Si (100) substrates by using a RPCVD system. For the highly P-doped Si films, we suggest a modified impurity distribution function as a function of phosphorous concentration, and characterize the electrical activation of phosphorous dopants in the films. Calculated values with the model are in good agreement with experiment results by Hall Effect measurements and secondary ion mass spectroscopy analyses.

AB - For the application of 2D/3D nMOSFET transistors, highly phosphorus-doped epitaxial silicon thin films were grown on Si (100) substrates by using a RPCVD system. For the highly P-doped Si films, we suggest a modified impurity distribution function as a function of phosphorous concentration, and characterize the electrical activation of phosphorous dopants in the films. Calculated values with the model are in good agreement with experiment results by Hall Effect measurements and secondary ion mass spectroscopy analyses.

KW - Dopant Activation

KW - Epitaxial Growth

KW - In-Situ Phosphorus Doping

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DO - 10.1166/jnn.2017.14019

M3 - Article

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VL - 17

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EP - 3369

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 5

ER -

Electrical activation of phosphorus in highly P-doped epitaxial silicon thin films

Abstract

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