Electrical activation of implanted single crystal germanium substrates

Craig Jasper; Leonard Rubin; Chad Lindfors; Kevin S. Jones; Jungwoo Oh

doi:10.1109/IIT.2002.1258063

Electrical activation of implanted single crystal germanium substrates

Craig Jasper, Leonard Rubin, Chad Lindfors, Kevin S. Jones, Jungwoo Oh

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

21 Citations (Scopus)

Abstract

We studied the electrical activation of ion implanted dopants in single crystal germanium substrates. Germanium was implanted with arsenic, phosphorus or boron, passivated, and rapid thermal annealed at various temperatures. Several surface passivation processes were explored to understand their influence on the activation process. Sheet resistances was measured by a four-point probe and Hall mobility was used to measure and quantify the activation fraction of dopant in the substrates. A sheet resistance minimum was achieved for all implanted dopants between 450 and 600°C. Variability in the passivation processes had a very large impact in the final sheet resistance values. Secondary Ion Mass Spectrometry demonstrated that there was a loss of dopant and or germanium during the annealing process. For near surface implants, an increase in sheet resistance corresponds to a decrease in activation percentage and an observed dopant loss. Deeper implants are not as susceptible to surface effects. Proper passivation of the germanium surface is critical for achieving low sheet resistance. Acceptable sheet resistances were obtained for the manufacturing of optical devices.

Original language	English
Title of host publication	2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings
Editors	Bob Brown, Terry L. Alford, Mike Nastasi, Michael C. Vella
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	548-551
Number of pages	4
ISBN (Electronic)	0780371550
DOIs	https://doi.org/10.1109/IIT.2002.1258063
Publication status	Published - 2002
Event	2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 - Taos, United States Duration: 2002 Sept 22 → 2002 Sept 27

Publication series

Name	Proceedings of the International Conference on Ion Implantation Technology
Volume	22-27-September-2002

Other

Other	2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002
Country/Territory	United States
City	Taos
Period	02/9/22 → 02/9/27

Bibliographical note

Publisher Copyright:
© 2002 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1109/IIT.2002.1258063

Cite this

Jasper, C., Rubin, L., Lindfors, C., Jones, K. S., & Oh, J. (2002). Electrical activation of implanted single crystal germanium substrates. In B. Brown, T. L. Alford, M. Nastasi, & M. C. Vella (Eds.), 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings (pp. 548-551). Article 1258063 (Proceedings of the International Conference on Ion Implantation Technology; Vol. 22-27-September-2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2002.1258063

Jasper, Craig ; Rubin, Leonard ; Lindfors, Chad et al. / Electrical activation of implanted single crystal germanium substrates. 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings. editor / Bob Brown ; Terry L. Alford ; Mike Nastasi ; Michael C. Vella. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 548-551 (Proceedings of the International Conference on Ion Implantation Technology).

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abstract = "We studied the electrical activation of ion implanted dopants in single crystal germanium substrates. Germanium was implanted with arsenic, phosphorus or boron, passivated, and rapid thermal annealed at various temperatures. Several surface passivation processes were explored to understand their influence on the activation process. Sheet resistances was measured by a four-point probe and Hall mobility was used to measure and quantify the activation fraction of dopant in the substrates. A sheet resistance minimum was achieved for all implanted dopants between 450 and 600°C. Variability in the passivation processes had a very large impact in the final sheet resistance values. Secondary Ion Mass Spectrometry demonstrated that there was a loss of dopant and or germanium during the annealing process. For near surface implants, an increase in sheet resistance corresponds to a decrease in activation percentage and an observed dopant loss. Deeper implants are not as susceptible to surface effects. Proper passivation of the germanium surface is critical for achieving low sheet resistance. Acceptable sheet resistances were obtained for the manufacturing of optical devices.",

author = "Craig Jasper and Leonard Rubin and Chad Lindfors and Jones, {Kevin S.} and Jungwoo Oh",

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Jasper, C, Rubin, L, Lindfors, C, Jones, KS & Oh, J 2002, Electrical activation of implanted single crystal germanium substrates. in B Brown, TL Alford, M Nastasi & MC Vella (eds), 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings., 1258063, Proceedings of the International Conference on Ion Implantation Technology, vol. 22-27-September-2002, Institute of Electrical and Electronics Engineers Inc., pp. 548-551, 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002, Taos, United States, 02/9/22. https://doi.org/10.1109/IIT.2002.1258063

Electrical activation of implanted single crystal germanium substrates. / Jasper, Craig; Rubin, Leonard; Lindfors, Chad et al.
2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings. ed. / Bob Brown; Terry L. Alford; Mike Nastasi; Michael C. Vella. Institute of Electrical and Electronics Engineers Inc., 2002. p. 548-551 1258063 (Proceedings of the International Conference on Ion Implantation Technology; Vol. 22-27-September-2002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - We studied the electrical activation of ion implanted dopants in single crystal germanium substrates. Germanium was implanted with arsenic, phosphorus or boron, passivated, and rapid thermal annealed at various temperatures. Several surface passivation processes were explored to understand their influence on the activation process. Sheet resistances was measured by a four-point probe and Hall mobility was used to measure and quantify the activation fraction of dopant in the substrates. A sheet resistance minimum was achieved for all implanted dopants between 450 and 600°C. Variability in the passivation processes had a very large impact in the final sheet resistance values. Secondary Ion Mass Spectrometry demonstrated that there was a loss of dopant and or germanium during the annealing process. For near surface implants, an increase in sheet resistance corresponds to a decrease in activation percentage and an observed dopant loss. Deeper implants are not as susceptible to surface effects. Proper passivation of the germanium surface is critical for achieving low sheet resistance. Acceptable sheet resistances were obtained for the manufacturing of optical devices.

AB - We studied the electrical activation of ion implanted dopants in single crystal germanium substrates. Germanium was implanted with arsenic, phosphorus or boron, passivated, and rapid thermal annealed at various temperatures. Several surface passivation processes were explored to understand their influence on the activation process. Sheet resistances was measured by a four-point probe and Hall mobility was used to measure and quantify the activation fraction of dopant in the substrates. A sheet resistance minimum was achieved for all implanted dopants between 450 and 600°C. Variability in the passivation processes had a very large impact in the final sheet resistance values. Secondary Ion Mass Spectrometry demonstrated that there was a loss of dopant and or germanium during the annealing process. For near surface implants, an increase in sheet resistance corresponds to a decrease in activation percentage and an observed dopant loss. Deeper implants are not as susceptible to surface effects. Proper passivation of the germanium surface is critical for achieving low sheet resistance. Acceptable sheet resistances were obtained for the manufacturing of optical devices.

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ER -

Jasper C, Rubin L, Lindfors C, Jones KS, Oh J. Electrical activation of implanted single crystal germanium substrates. In Brown B, Alford TL, Nastasi M, Vella MC, editors, 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 548-551. 1258063. (Proceedings of the International Conference on Ion Implantation Technology). doi: 10.1109/IIT.2002.1258063

Electrical activation of implanted single crystal germanium substrates

Abstract

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