Abstract
Shubnikovde Haas and Van der Pauw Hall-effect measurements on In0.52Al0.48As/In0.65Ga0.35As/ In0.53Ga0.47As/In0.52Al0.48As quantum wells grown by molecular-beam epitaxy have been carried out to investigate the electrical properties of an electron gas and to determine the subband energies and wave functions in a potential well. Shubnikovde Haas measurements have demonstrated the existence of a quasi-two-dimensional electron gas in the In0.65Ga0.35As potential well between the In0.52Al0.48As and In0.53Ga0.47As barriers. With use of these experimental results and a self-consistent numerical method, the electric subband energies and energy eigenfunctions were determined.
| Original language | English |
|---|---|
| Pages (from-to) | 12891-12893 |
| Number of pages | 3 |
| Journal | Physical Review B-Condensed Matter |
| Volume | 44 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 1991 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics