Electric field induced Mott transition and bipolar resistive switching in La₂Ti₂O_7-x thin film

Engineering

• Resistive 100%
• Switching 80%
• Mechanisms 80%
• Lanthanum 40%
• Density 40%
• Titanium Oxide 40%
• Oxidation Reaction 40%
• Thin Films 20%
• Room Temperature 20%
• Resistance Change 20%
• Electroforming 20%
• Complex Process 20%
• Resistive Random Access Memory 20%
• Induced Electric Field 20%
• Electrode Size 20%
• Demonstrates 20%
• Reduction 20%
• Properties 20%
• Simulation 20%

Material Science

• Material 40%
• Thin Films 20%
• Durability 20%
• Liquid Films 20%
• Devices 20%
• Electrode 20%