Electric field induced Mott transition and bipolar resistive switching in La2Ti2O7-x thin film

Yue Wang; Minjae Kim; Chan Lee; Akendra Singh Chabungbam; Jaeyeon Kim; Jeongwoo Lee; Hong Sub Lee; Qingyi Shao; Hyunchul Sohn; Hyung Ho Park

doi:10.1016/j.apmt.2022.101395

Electric field induced Mott transition and bipolar resistive switching in La₂Ti₂O_7-x thin film

Yue Wang, Minjae Kim, Chan Lee, Akendra Singh Chabungbam, Jaeyeon Kim, Jeongwoo Lee, Hong Sub Lee, Qingyi Shao, Hyunchul Sohn, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The oxygen ion migration-induced resistive switching is a complex process with multiple mechanisms. This study investigated resistive switching properties and mechanism for strongly correlated materials lanthanum titanium oxide La₂Ti₂O_7-x (LTO) using spectromicroscopy and density functional theory simulation. Bipolar resistive switching without an electroforming process was first reported in LTO film. The mechanism can be explained by oxygen ion migration induced band-filling controlled Mott transition in LTO. Oxygen ion migration-induced reduction and oxidation of LTO can increase and decrease Ti 3d orbital filling state, which in turn increases and reduces Mott-Hubbard gap and LTO resistance, respectively. In addition, the RRAM device, TiN/LTO/Pt, shows stable endurance, retention, and small variability at room temperature and 85 ℃, with a stable on/off-state current density, which is independent of the electrode size. This work not only demonstrates that LTO and other strongly correlated materials are potential candidates to prepare resistive random access memory based on oxygen ion migration induced Mott-transition mechanism but also indicates that intrinsic resistance change in switching layers between top and bottom electrodes also contribute to overall resistive switching.

Original language	English
Article number	101395
Journal	Applied Materials Today
Volume	26
DOIs	https://doi.org/10.1016/j.apmt.2022.101395
Publication status	Published - 2022 Mar

Bibliographical note

Funding Information:
This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (Grant 2019R1A2C2087604). This work was also supported by Creative Materials Discovery Program through the National Research Foundation of Korea funded by the Ministry of Science and ICT (Grant 2018M3D1A1058536 ). Yue Wang would like to thank the China Scholarship Council (CSC) for financial support.

Publisher Copyright:
© 2022 Elsevier Ltd

All Science Journal Classification (ASJC) codes

Materials Science(all)

Access to Document

10.1016/j.apmt.2022.101395

Cite this

@article{fe907c84e8594ac7bc87d4090168c8d0,

title = "Electric field induced Mott transition and bipolar resistive switching in La2Ti2O7-x thin film",

abstract = "The oxygen ion migration-induced resistive switching is a complex process with multiple mechanisms. This study investigated resistive switching properties and mechanism for strongly correlated materials lanthanum titanium oxide La2Ti2O7-x (LTO) using spectromicroscopy and density functional theory simulation. Bipolar resistive switching without an electroforming process was first reported in LTO film. The mechanism can be explained by oxygen ion migration induced band-filling controlled Mott transition in LTO. Oxygen ion migration-induced reduction and oxidation of LTO can increase and decrease Ti 3d orbital filling state, which in turn increases and reduces Mott-Hubbard gap and LTO resistance, respectively. In addition, the RRAM device, TiN/LTO/Pt, shows stable endurance, retention, and small variability at room temperature and 85 ℃, with a stable on/off-state current density, which is independent of the electrode size. This work not only demonstrates that LTO and other strongly correlated materials are potential candidates to prepare resistive random access memory based on oxygen ion migration induced Mott-transition mechanism but also indicates that intrinsic resistance change in switching layers between top and bottom electrodes also contribute to overall resistive switching.",

author = "Yue Wang and Minjae Kim and Chan Lee and Chabungbam, {Akendra Singh} and Jaeyeon Kim and Jeongwoo Lee and Lee, {Hong Sub} and Qingyi Shao and Hyunchul Sohn and Park, {Hyung Ho}",

note = "Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (Grant 2019R1A2C2087604). This work was also supported by Creative Materials Discovery Program through the National Research Foundation of Korea funded by the Ministry of Science and ICT (Grant 2018M3D1A1058536 ). Yue Wang would like to thank the China Scholarship Council (CSC) for financial support. Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

year = "2022",

month = mar,

doi = "10.1016/j.apmt.2022.101395",

language = "English",

volume = "26",

journal = "Applied Materials Today",

issn = "2352-9407",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Electric field induced Mott transition and bipolar resistive switching in La2Ti2O7-x thin film

AU - Wang, Yue

AU - Kim, Minjae

AU - Lee, Chan

AU - Chabungbam, Akendra Singh

AU - Kim, Jaeyeon

AU - Lee, Jeongwoo

AU - Lee, Hong Sub

AU - Shao, Qingyi

AU - Sohn, Hyunchul

AU - Park, Hyung Ho

N1 - Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korea government (Grant 2019R1A2C2087604). This work was also supported by Creative Materials Discovery Program through the National Research Foundation of Korea funded by the Ministry of Science and ICT (Grant 2018M3D1A1058536 ). Yue Wang would like to thank the China Scholarship Council (CSC) for financial support. Publisher Copyright: © 2022 Elsevier Ltd

PY - 2022/3

Y1 - 2022/3

N2 - The oxygen ion migration-induced resistive switching is a complex process with multiple mechanisms. This study investigated resistive switching properties and mechanism for strongly correlated materials lanthanum titanium oxide La2Ti2O7-x (LTO) using spectromicroscopy and density functional theory simulation. Bipolar resistive switching without an electroforming process was first reported in LTO film. The mechanism can be explained by oxygen ion migration induced band-filling controlled Mott transition in LTO. Oxygen ion migration-induced reduction and oxidation of LTO can increase and decrease Ti 3d orbital filling state, which in turn increases and reduces Mott-Hubbard gap and LTO resistance, respectively. In addition, the RRAM device, TiN/LTO/Pt, shows stable endurance, retention, and small variability at room temperature and 85 ℃, with a stable on/off-state current density, which is independent of the electrode size. This work not only demonstrates that LTO and other strongly correlated materials are potential candidates to prepare resistive random access memory based on oxygen ion migration induced Mott-transition mechanism but also indicates that intrinsic resistance change in switching layers between top and bottom electrodes also contribute to overall resistive switching.

AB - The oxygen ion migration-induced resistive switching is a complex process with multiple mechanisms. This study investigated resistive switching properties and mechanism for strongly correlated materials lanthanum titanium oxide La2Ti2O7-x (LTO) using spectromicroscopy and density functional theory simulation. Bipolar resistive switching without an electroforming process was first reported in LTO film. The mechanism can be explained by oxygen ion migration induced band-filling controlled Mott transition in LTO. Oxygen ion migration-induced reduction and oxidation of LTO can increase and decrease Ti 3d orbital filling state, which in turn increases and reduces Mott-Hubbard gap and LTO resistance, respectively. In addition, the RRAM device, TiN/LTO/Pt, shows stable endurance, retention, and small variability at room temperature and 85 ℃, with a stable on/off-state current density, which is independent of the electrode size. This work not only demonstrates that LTO and other strongly correlated materials are potential candidates to prepare resistive random access memory based on oxygen ion migration induced Mott-transition mechanism but also indicates that intrinsic resistance change in switching layers between top and bottom electrodes also contribute to overall resistive switching.

UR - http://www.scopus.com/inward/record.url?scp=85123882976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85123882976&partnerID=8YFLogxK

U2 - 10.1016/j.apmt.2022.101395

DO - 10.1016/j.apmt.2022.101395

M3 - Article

AN - SCOPUS:85123882976

SN - 2352-9407

VL - 26

JO - Applied Materials Today

JF - Applied Materials Today

M1 - 101395

ER -