Electric field control of magnetoresistance in a lateral InAs quantum well spin valve

Hyun Kum; Debashish Basu; Pallab Bhattacharya; Wei Guo

doi:10.1063/1.3268432

Electric field control of magnetoresistance in a lateral InAs quantum well spin valve

Hyun Kum, Debashish Basu, Pallab Bhattacharya, Wei Guo

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The control of magnetoresistance of a lateral spin valve with bias applied to a gate placed outside the channel region is demonstrated. The spin valve channel consists of an InAs/In_0.53Ga_0.47As/In _0.52Al_0.48As two-dimensional electron gas lattice matched to (001) InP. The polarizer and analyzer contacts are made with 35 nm type B MnAs/In_0.52Al_0.48As Schottky tunnel barriers. The magnetoresistance changes from 0.14% to 4% at 10 K in a device in which the spin transport is in the direction of magnetization of the polarizer and analyzer contacts. The effect is absent in a GaAs channel spin valve and other control devices indicating that the change in magnetoresistance is due to Rashba spin-orbit coupling.

Original language	English
Article number	212503
Journal	Applied Physics Letters
Volume	95
Issue number	21
DOIs	https://doi.org/10.1063/1.3268432
Publication status	Published - 2009

Bibliographical note

Funding Information:
This work is supported by the National Science Foundation (Grant. No. ECCS-0754367 and the Office of Naval Research (Grant No. N00014–09–1–0086). Useful discussions with Professor Supriyo Datta and Dr. Dipankar Saha are gratefully acknowledged by the authors.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3268432

Cite this

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title = "Electric field control of magnetoresistance in a lateral InAs quantum well spin valve",

abstract = "The control of magnetoresistance of a lateral spin valve with bias applied to a gate placed outside the channel region is demonstrated. The spin valve channel consists of an InAs/In0.53Ga0.47As/In 0.52Al0.48As two-dimensional electron gas lattice matched to (001) InP. The polarizer and analyzer contacts are made with 35 nm type B MnAs/In0.52Al0.48As Schottky tunnel barriers. The magnetoresistance changes from 0.14% to 4% at 10 K in a device in which the spin transport is in the direction of magnetization of the polarizer and analyzer contacts. The effect is absent in a GaAs channel spin valve and other control devices indicating that the change in magnetoresistance is due to Rashba spin-orbit coupling.",

author = "Hyun Kum and Debashish Basu and Pallab Bhattacharya and Wei Guo",

note = "Funding Information: This work is supported by the National Science Foundation (Grant. No. ECCS-0754367 and the Office of Naval Research (Grant No. N00014–09–1–0086). Useful discussions with Professor Supriyo Datta and Dr. Dipankar Saha are gratefully acknowledged by the authors.",

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AU - Kum, Hyun

AU - Basu, Debashish

AU - Bhattacharya, Pallab

AU - Guo, Wei

N1 - Funding Information: This work is supported by the National Science Foundation (Grant. No. ECCS-0754367 and the Office of Naval Research (Grant No. N00014–09–1–0086). Useful discussions with Professor Supriyo Datta and Dr. Dipankar Saha are gratefully acknowledged by the authors.

PY - 2009

Y1 - 2009

N2 - The control of magnetoresistance of a lateral spin valve with bias applied to a gate placed outside the channel region is demonstrated. The spin valve channel consists of an InAs/In0.53Ga0.47As/In 0.52Al0.48As two-dimensional electron gas lattice matched to (001) InP. The polarizer and analyzer contacts are made with 35 nm type B MnAs/In0.52Al0.48As Schottky tunnel barriers. The magnetoresistance changes from 0.14% to 4% at 10 K in a device in which the spin transport is in the direction of magnetization of the polarizer and analyzer contacts. The effect is absent in a GaAs channel spin valve and other control devices indicating that the change in magnetoresistance is due to Rashba spin-orbit coupling.

AB - The control of magnetoresistance of a lateral spin valve with bias applied to a gate placed outside the channel region is demonstrated. The spin valve channel consists of an InAs/In0.53Ga0.47As/In 0.52Al0.48As two-dimensional electron gas lattice matched to (001) InP. The polarizer and analyzer contacts are made with 35 nm type B MnAs/In0.52Al0.48As Schottky tunnel barriers. The magnetoresistance changes from 0.14% to 4% at 10 K in a device in which the spin transport is in the direction of magnetization of the polarizer and analyzer contacts. The effect is absent in a GaAs channel spin valve and other control devices indicating that the change in magnetoresistance is due to Rashba spin-orbit coupling.

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Electric field control of magnetoresistance in a lateral InAs quantum well spin valve

Abstract

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