Electric-field assisted growth and self-assembly of intrinsic silicon nanowires

Ongi Englander; Dane Christensen; Jongbaeg Kim; Liwei Lin; Stephen J.S. Morris

doi:10.1021/nl050109a

Electric-field assisted growth and self-assembly of intrinsic silicon nanowires

Ongi Englander, Dane Christensen, Jongbaeg Kim, Liwei Lin, Stephen J.S. Morris

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

107 Citations (Scopus)

Abstract

Electric-field assisted growth and self-assembly of intrinsic silicon nanowires, in-situ, is demonstrated. The nanowires are seen to respond to the presence of a localized DC electric field set up between adjacent MEMS structures. The response is expressed in the form of improved nanowire order, alignment, and organization while transcending a gap. This process provides a simple yet reliable method for enhanced control over intrinsic one-dimensional nanostructure placement and handling.

Original language	English
Pages (from-to)	705-708
Number of pages	4
Journal	Nano letters
Volume	5
Issue number	4
DOIs	https://doi.org/10.1021/nl050109a
Publication status	Published - 2005 Apr

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl050109a

Cite this

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abstract = "Electric-field assisted growth and self-assembly of intrinsic silicon nanowires, in-situ, is demonstrated. The nanowires are seen to respond to the presence of a localized DC electric field set up between adjacent MEMS structures. The response is expressed in the form of improved nanowire order, alignment, and organization while transcending a gap. This process provides a simple yet reliable method for enhanced control over intrinsic one-dimensional nanostructure placement and handling.",

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AU - Lin, Liwei

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N2 - Electric-field assisted growth and self-assembly of intrinsic silicon nanowires, in-situ, is demonstrated. The nanowires are seen to respond to the presence of a localized DC electric field set up between adjacent MEMS structures. The response is expressed in the form of improved nanowire order, alignment, and organization while transcending a gap. This process provides a simple yet reliable method for enhanced control over intrinsic one-dimensional nanostructure placement and handling.

AB - Electric-field assisted growth and self-assembly of intrinsic silicon nanowires, in-situ, is demonstrated. The nanowires are seen to respond to the presence of a localized DC electric field set up between adjacent MEMS structures. The response is expressed in the form of improved nanowire order, alignment, and organization while transcending a gap. This process provides a simple yet reliable method for enhanced control over intrinsic one-dimensional nanostructure placement and handling.

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Electric-field assisted growth and self-assembly of intrinsic silicon nanowires

Abstract

All Science Journal Classification (ASJC) codes

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