Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure

Ah Jin Cho; Seok Daniel Namgung; Hojoong Kim; Jang Yeon Kwon

doi:10.1063/1.4991028

Electric and photovoltaic characteristics of a multi-layer ReS₂/ReSe₂ heterostructure

Ah Jin Cho, Seok Daniel Namgung, Hojoong Kim, Jang Yeon Kwon

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

Among the various unique properties of two-dimensional materials, the ability to form a van der Waals (vdW) heterojunction between them is very valuable, as it offers a superior interface quality without the lattice mismatch problem. In this work, a ReS₂/ReSe₂ vdW heterostructure was fabricated, and its electrical and photovoltaic behaviors were discovered. The heterojunction showed a gate-tunable diode property with the maximum rectification ratio of 3150. Under illumination, it exhibited a photovoltaic effect with an efficiency of ∼0.5%. This study outlines the potential of Re-based 2D semiconductors and their integration by forming a vdW heterojunction for use in optoelectronic devices.

Original language	English
Article number	076101
Journal	APL Materials
Volume	5
Issue number	7
DOIs	https://doi.org/10.1063/1.4991028
Publication status	Published - 2017 Jul 1

Bibliographical note

Publisher Copyright:
© 2017 Author(s).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Engineering(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1063/1.4991028

Cite this

@article{9e1b4296941541fd82668c21e8a7db20,

title = "Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure",

abstract = "Among the various unique properties of two-dimensional materials, the ability to form a van der Waals (vdW) heterojunction between them is very valuable, as it offers a superior interface quality without the lattice mismatch problem. In this work, a ReS2/ReSe2 vdW heterostructure was fabricated, and its electrical and photovoltaic behaviors were discovered. The heterojunction showed a gate-tunable diode property with the maximum rectification ratio of 3150. Under illumination, it exhibited a photovoltaic effect with an efficiency of ∼0.5%. This study outlines the potential of Re-based 2D semiconductors and their integration by forming a vdW heterojunction for use in optoelectronic devices.",

author = "Cho, {Ah Jin} and Namgung, {Seok Daniel} and Hojoong Kim and Kwon, {Jang Yeon}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = jul,

day = "1",

doi = "10.1063/1.4991028",

language = "English",

volume = "5",

journal = "APL Materials",

issn = "2166-532X",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure

AU - Cho, Ah Jin

AU - Namgung, Seok Daniel

AU - Kim, Hojoong

AU - Kwon, Jang Yeon

PY - 2017/7/1

Y1 - 2017/7/1

N2 - Among the various unique properties of two-dimensional materials, the ability to form a van der Waals (vdW) heterojunction between them is very valuable, as it offers a superior interface quality without the lattice mismatch problem. In this work, a ReS2/ReSe2 vdW heterostructure was fabricated, and its electrical and photovoltaic behaviors were discovered. The heterojunction showed a gate-tunable diode property with the maximum rectification ratio of 3150. Under illumination, it exhibited a photovoltaic effect with an efficiency of ∼0.5%. This study outlines the potential of Re-based 2D semiconductors and their integration by forming a vdW heterojunction for use in optoelectronic devices.

AB - Among the various unique properties of two-dimensional materials, the ability to form a van der Waals (vdW) heterojunction between them is very valuable, as it offers a superior interface quality without the lattice mismatch problem. In this work, a ReS2/ReSe2 vdW heterostructure was fabricated, and its electrical and photovoltaic behaviors were discovered. The heterojunction showed a gate-tunable diode property with the maximum rectification ratio of 3150. Under illumination, it exhibited a photovoltaic effect with an efficiency of ∼0.5%. This study outlines the potential of Re-based 2D semiconductors and their integration by forming a vdW heterojunction for use in optoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=85021914061&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021914061&partnerID=8YFLogxK

U2 - 10.1063/1.4991028

DO - 10.1063/1.4991028

M3 - Article

AN - SCOPUS:85021914061

SN - 2166-532X

VL - 5

JO - APL Materials

JF - APL Materials

IS - 7

M1 - 076101

ER -