Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2/MoS2 Dichalcogenide Heterojunction

Atiye Pezeshki, Seyed Hossein Hosseini Shokouh, Tavakol Nazari, Kyunghwan Oh, Seongil Im

Research output: Contribution to journalArticlepeer-review

222 Citations (Scopus)


Mo-based van der Waals heterojunction p-n diodes with p-type α-MoTe2 and n-type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 103, ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W-1, and an external quantum efficiency of 85% under blue-light illumination.

Original languageEnglish
Pages (from-to)3216-3222
Number of pages7
JournalAdvanced Materials
Issue number16
Publication statusPublished - 2016 Apr 27

Bibliographical note

Funding Information:
A. P. and S. H. H. S. equally contributed to this work. The authors acknowledge financial support from NRF (NRL program: Grant No. 2014R1A2A1A01004815), Nano-Materials Technology Development Program (Grant No. 2012M3A7B4034985), and Brain Korea 21 plus Program, the Yonsei University (Future-leading Research Initiative of 2014: Grant No. 2014-22-0168).

Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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