Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2/MoS2 Dichalcogenide Heterojunction

Atiye Pezeshki; Seyed Hossein Hosseini Shokouh; Tavakol Nazari; Kyunghwan Oh; Seongil Im

doi:10.1002/adma.201504090

Electric and Photovoltaic Behavior of a Few-Layer α-MoTe₂/MoS₂ Dichalcogenide Heterojunction

Atiye Pezeshki, Seyed Hossein Hosseini Shokouh, Tavakol Nazari, Kyunghwan Oh, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

222 Citations (Scopus)

Abstract

Mo-based van der Waals heterojunction p-n diodes with p-type α-MoTe₂ and n-type MoS₂ are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 10³, ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W^-1, and an external quantum efficiency of 85% under blue-light illumination.

Original language	English
Pages (from-to)	3216-3222
Number of pages	7
Journal	Advanced Materials
Volume	28
Issue number	16
DOIs	https://doi.org/10.1002/adma.201504090
Publication status	Published - 2016 Apr 27

Bibliographical note

Funding Information:
A. P. and S. H. H. S. equally contributed to this work. The authors acknowledge financial support from NRF (NRL program: Grant No. 2014R1A2A1A01004815), Nano-Materials Technology Development Program (Grant No. 2012M3A7B4034985), and Brain Korea 21 plus Program, the Yonsei University (Future-leading Research Initiative of 2014: Grant No. 2014-22-0168).

Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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Access to Document

10.1002/adma.201504090

Cite this

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title = "Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2/MoS2 Dichalcogenide Heterojunction",

abstract = "Mo-based van der Waals heterojunction p-n diodes with p-type α-MoTe2 and n-type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 103, ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W-1, and an external quantum efficiency of 85% under blue-light illumination.",

author = "Atiye Pezeshki and Shokouh, {Seyed Hossein Hosseini} and Tavakol Nazari and Kyunghwan Oh and Seongil Im",

note = "Funding Information: A. P. and S. H. H. S. equally contributed to this work. The authors acknowledge financial support from NRF (NRL program: Grant No. 2014R1A2A1A01004815), Nano-Materials Technology Development Program (Grant No. 2012M3A7B4034985), and Brain Korea 21 plus Program, the Yonsei University (Future-leading Research Initiative of 2014: Grant No. 2014-22-0168). Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

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AU - Shokouh, Seyed Hossein Hosseini

AU - Nazari, Tavakol

AU - Oh, Kyunghwan

AU - Im, Seongil

N1 - Funding Information: A. P. and S. H. H. S. equally contributed to this work. The authors acknowledge financial support from NRF (NRL program: Grant No. 2014R1A2A1A01004815), Nano-Materials Technology Development Program (Grant No. 2012M3A7B4034985), and Brain Korea 21 plus Program, the Yonsei University (Future-leading Research Initiative of 2014: Grant No. 2014-22-0168). Publisher Copyright: © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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AB - Mo-based van der Waals heterojunction p-n diodes with p-type α-MoTe2 and n-type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 103, ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W-1, and an external quantum efficiency of 85% under blue-light illumination.

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