Abstract
Efficient room temperature NIR detection with sufficient current gain is made with a solution-processed networked SWNT FET. The high performance NIR-FET with significantly enhanced photocurrent by more than two orders of magnitude compared to dark current in the depleted state is attributed to multiple Schottky barriers in the network, each of which absorb NIR and effectively separate photocarriers to corresponding electrodes.
Original language | English |
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Pages (from-to) | 653-659 |
Number of pages | 7 |
Journal | Small |
Volume | 10 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2014 Feb 26 |
All Science Journal Classification (ASJC) codes
- Biotechnology
- Biomaterials
- General Chemistry
- General Materials Science