A single heterostructure InGaAlAs/InP phase modulator utilizing the quadratic electrooptic effect (QEO) is reported for the first time. The calculated value of QEO coefficient from the measurements is 3.7 × 10-19 m2/V2 at 80 meV below the band edge. In addition, the linear electrooptic effect (LEO) coefficient is estimated to be 1.2 × 10-12 m/V which is comparable to that of GaAs. The propagation loss of a single mode ridge waveguide is in the range of 1.5-1.7 dB/cm which is better than the previously reported value in this material system. The measured single mode phase shifts are 5.5 and 2.8°/Vmm for TE and TM polarizations, respectively. These values are the largest values reported so far in InGaAlAs system.
|Number of pages||4|
|Journal||IEEE Photonics Technology Letters|
|Publication status||Published - 1993 Jan|
Bibliographical noteFunding Information:
Manuscript received May 27, 1992; revised October 23, 1992. This work was supported by ARO/DARPA under Contract DAAL03-91-C-0042. S.-K. Han and R. V. Ramaswamy are with the Photonics Research Laboratory, Department of Electrical Engineering, University of Florida, Gainesville, FL 32611. W.-Q. Li and P. K. Bhattacharya are with the Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109. IEEE Log Number 9206051.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering