Abstract
In this paper, we first analyze the efficiency of importance sampling (IS) method in spin transfer torque random access memory (STT-RAM) design with industry-compatible model parameter. Commonly used normal fitting method cannot estimate the yield accurately unless an output distribution follows the Gaussian distribution. The efficiency of IS method is significantly degraded when industry-compatible model parameters are used because most variables affected by process variation are not controllable. With industry-compatible 45-nm model parameters, Monte Carlo HSPICE simulation results show that the required number of simulations to satisfy error rate less than 5% should be greater than 50,000.
Original language | English |
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Title of host publication | 2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 400-403 |
Number of pages | 4 |
ISBN (Electronic) | 9781509002467 |
DOIs | |
Publication status | Published - 2016 Mar 23 |
Event | IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015 - Cairo, Egypt Duration: 2015 Dec 6 → 2015 Dec 9 |
Publication series
Name | Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems |
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Volume | 2016-March |
Other
Other | IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015 |
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Country/Territory | Egypt |
City | Cairo |
Period | 15/12/6 → 15/12/9 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering