Effects of titanium suicide on AuSiTi/n-GaN ohmic contact systems

C. Y. Kim, S. W. Kim, C. H. Hong, D. W. Kim, H. K. Baik, C. N. Whang

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Si embedded AuTi/n-GaN contact schemes have been developed for a low barrier ohmic contact to n-GaN. Contacts subjected to rapid thermal annealing temperature from 400 to 900°C for 10 s exhibited linear current-voltage characteristics and had low specific contact resistance of mid-10-5 Ω cm2 above 700°C. XRD, AES, and TEM experiments show that TiSix (x = 1 and 2) layer was formed at the metal/GaN interface above 500°C and the contact interface was abrupt. Ohmic contact was related to the formation of TiSix with a low work function (3.94-3.99 eV in case of TiSi).

Original languageEnglish
Pages (from-to)720-724
Number of pages5
JournalJournal of Crystal Growth
Publication statusPublished - 1998 Jun 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


Dive into the research topics of 'Effects of titanium suicide on AuSiTi/n-GaN ohmic contact systems'. Together they form a unique fingerprint.

Cite this