Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor

Yunseok Jang; Jeong Ho Cho; Do Hwan Kim; Yeong Don Park; Minkyu Hwang; Kilwon Cho

doi:10.1063/1.2457776

Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor

Yunseok Jang, Jeong Ho Cho, Do Hwan Kim, Yeong Don Park, Minkyu Hwang, Kilwon Cho

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

98 Citations (Scopus)

Abstract

In order to investigate the effects of permanent dipoles on insulator surfaces on the electrical properties of organic thin-film transistors, the authors fabricated insulators with various self-assembled monolayers and similar surface energies. Surprisingly, they found that the field-effect mobility of pentacene thin-film transistors increases by a factor of approximately 20 for insulators with an electron-withdrawing group. This remarkable increase in the field-effect mobility is due to the increase in the hole density of the insulator surface that arises from the increased band bending of the insulator/semiconductor interface.

Original language	English
Article number	132104
Journal	Applied Physics Letters
Volume	90
Issue number	13
DOIs	https://doi.org/10.1063/1.2457776
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the ERC Program (R11-2003-006-03005-0) of the MOST, a Grant (F0004022-2006-22) from the Information Display R&D Center under the 21st Century Frontier R&D Program, a Grant (RTI04-01-04) from the Regional Technology Innovation Program of the MOCIE, the BK21 Program of the Ministry of Education and Human Resources Development of Korea, and the Pohang Accelerator Laboratory by providing the 2B1 and 4B1 beam lines used in this study.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2457776

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title = "Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor",

abstract = "In order to investigate the effects of permanent dipoles on insulator surfaces on the electrical properties of organic thin-film transistors, the authors fabricated insulators with various self-assembled monolayers and similar surface energies. Surprisingly, they found that the field-effect mobility of pentacene thin-film transistors increases by a factor of approximately 20 for insulators with an electron-withdrawing group. This remarkable increase in the field-effect mobility is due to the increase in the hole density of the insulator surface that arises from the increased band bending of the insulator/semiconductor interface.",

author = "Yunseok Jang and Cho, {Jeong Ho} and Kim, {Do Hwan} and Park, {Yeong Don} and Minkyu Hwang and Kilwon Cho",

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AU - Kim, Do Hwan

AU - Park, Yeong Don

AU - Hwang, Minkyu

AU - Cho, Kilwon

N1 - Funding Information: This work was supported by the ERC Program (R11-2003-006-03005-0) of the MOST, a Grant (F0004022-2006-22) from the Information Display R&D Center under the 21st Century Frontier R&D Program, a Grant (RTI04-01-04) from the Regional Technology Innovation Program of the MOCIE, the BK21 Program of the Ministry of Education and Human Resources Development of Korea, and the Pohang Accelerator Laboratory by providing the 2B1 and 4B1 beam lines used in this study.

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AB - In order to investigate the effects of permanent dipoles on insulator surfaces on the electrical properties of organic thin-film transistors, the authors fabricated insulators with various self-assembled monolayers and similar surface energies. Surprisingly, they found that the field-effect mobility of pentacene thin-film transistors increases by a factor of approximately 20 for insulators with an electron-withdrawing group. This remarkable increase in the field-effect mobility is due to the increase in the hole density of the insulator surface that arises from the increased band bending of the insulator/semiconductor interface.

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Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor

Abstract

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