Effects of the interfacial layer on electrical properties of TiO 2-based high-k dielectric composite films

C. E. Kim, I. Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Effects of interfacial layer on the electrical properties of TiO 2 based dielectric thin films prepared by atomic layer deposition are investigated. It was confirmed from XPS data that the Hf-silicate and La-silicate interfacial layers including SiOx were formed in the interface of the HfO2/TiO2/Al2O3 (HTA) and La2O3/TiO2/Al2O 3 (LTA) gate stack structures, respectively. In addition, the dielectric constants and leakage currents of HTA and LTA structures were affected by the formation of Hf-silicate and La-silicate layer in the interface and crystallization of TiO2 thin film, respectively. It was also found that the LTA thin film annealed at 600°C showed the low equivalent oxide thickness of 0.91 nm and the low leakage current of 4.16×10 -6 A/cm2 at 4 MV/cm.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 5
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
PublisherElectrochemical Society Inc.
Pages89-92
Number of pages4
Edition3
ISBN (Electronic)9781607683131
ISBN (Print)9781566779555
DOIs
Publication statusPublished - 2012
Event5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
Duration: 2012 May 62012 May 10

Publication series

NameECS Transactions
Number3
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Country/TerritoryUnited States
CitySeattle, WA
Period12/5/612/5/10

All Science Journal Classification (ASJC) codes

  • General Engineering

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