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Effects of the interfacial layer on electrical characteristics of Al
2
O
3
/TiO
2
/Al
2
O
3
thin films for gate dielectrics
Chang Eun Kim,
Ilgu Yun
Department of Electrical and Electronic Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
21
Citations (Scopus)
Overview
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Dive into the research topics of 'Effects of the interfacial layer on electrical characteristics of Al
2
O
3
/TiO
2
/Al
2
O
3
thin films for gate dielectrics'. Together they form a unique fingerprint.
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Weight
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Engineering
Titanium Oxide
100%
Interfacial Layer
66%
Thin Films
50%
Gate Dielectric
33%
Annealing
33%
Atomic Layer Deposition
16%
Thermal Annealing
16%
Annealing Temperature
16%
Dielectric Layer
16%
Structural Property
16%
Si Substrate
16%
Critical Point
16%
Composite
16%
Material Science
Thin Films
50%
Electrical Property
33%
Dielectric Material
16%
Permittivity
16%
Structural Property
16%
Chemical State
16%
Chemical Engineering
Atomic Layer Deposition
16%