Effects of the interfacial layer on electrical characteristics of Al                          2                         O                         3                         /TiO                         2                         /Al                         2                         O                         3                          thin films for gate dielectrics

Chang Eun Kim; Ilgu Yun

doi:10.1016/j.apsusc.2011.11.043

Effects of the interfacial layer on electrical characteristics of Al ₂ O ₃ /TiO ₂ /Al ₂ O ₃ thin films for gate dielectrics

Chang Eun Kim, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Effects of thermal annealing on the electrical properties of Al ₂ O ₃ /TiO ₂ /Al ₂ O ₃ (ATA) dielectric thin films prepared by atomic layer deposition are investigated. The structural properties and chemical states in the interfacial layer are analyzed with varying the annealing temperature. The dielectric constant and leakage current are affected by the formation of Al ₂ O ₃ -TiO ₂ composite and interfacial layer including SiO _x in the interface by the annealing. The transformation of interfacial layer at the interface of the ATA/Si substrate due to the annealing is a critical point to apply ATA thin films as gate dielectric layers.

Original language	English
Pages (from-to)	3089-3093
Number of pages	5
Journal	Applied Surface Science
Volume	258
Issue number	7
DOIs	https://doi.org/10.1016/j.apsusc.2011.11.043
Publication status	Published - 2012 Jan 15

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Kim, C. E., & Yun, I. (2012). Effects of the interfacial layer on electrical characteristics of Al ₂ O ₃ /TiO ₂ /Al ₂ O ₃ thin films for gate dielectrics Applied Surface Science, 258(7), 3089-3093. https://doi.org/10.1016/j.apsusc.2011.11.043

Kim, Chang Eun ; Yun, Ilgu. / Effects of the interfacial layer on electrical characteristics of Al ₂ O ₃ /TiO ₂ /Al ₂ O ₃ thin films for gate dielectrics In: Applied Surface Science. 2012 ; Vol. 258, No. 7. pp. 3089-3093.

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title = " Effects of the interfacial layer on electrical characteristics of Al 2 O 3 /TiO 2 /Al 2 O 3 thin films for gate dielectrics ",

abstract = " Effects of thermal annealing on the electrical properties of Al 2 O 3 /TiO 2 /Al 2 O 3 (ATA) dielectric thin films prepared by atomic layer deposition are investigated. The structural properties and chemical states in the interfacial layer are analyzed with varying the annealing temperature. The dielectric constant and leakage current are affected by the formation of Al 2 O 3 -TiO 2 composite and interfacial layer including SiO x in the interface by the annealing. The transformation of interfacial layer at the interface of the ATA/Si substrate due to the annealing is a critical point to apply ATA thin films as gate dielectric layers.",

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Kim, CE & Yun, I 2012, ' Effects of the interfacial layer on electrical characteristics of Al ₂ O ₃ /TiO ₂ /Al ₂ O ₃ thin films for gate dielectrics ', Applied Surface Science, vol. 258, no. 7, pp. 3089-3093. https://doi.org/10.1016/j.apsusc.2011.11.043

Effects of the interfacial layer on electrical characteristics of Al ₂ O ₃ /TiO ₂ /Al ₂ O ₃ thin films for gate dielectrics . / Kim, Chang Eun; Yun, Ilgu.
In: Applied Surface Science, Vol. 258, No. 7, 15.01.2012, p. 3089-3093.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effects of the interfacial layer on electrical characteristics of Al 2 O 3 /TiO 2 /Al 2 O 3 thin films for gate dielectrics

AU - Kim, Chang Eun

AU - Yun, Ilgu

PY - 2012/1/15

Y1 - 2012/1/15

N2 - Effects of thermal annealing on the electrical properties of Al 2 O 3 /TiO 2 /Al 2 O 3 (ATA) dielectric thin films prepared by atomic layer deposition are investigated. The structural properties and chemical states in the interfacial layer are analyzed with varying the annealing temperature. The dielectric constant and leakage current are affected by the formation of Al 2 O 3 -TiO 2 composite and interfacial layer including SiO x in the interface by the annealing. The transformation of interfacial layer at the interface of the ATA/Si substrate due to the annealing is a critical point to apply ATA thin films as gate dielectric layers.

AB - Effects of thermal annealing on the electrical properties of Al 2 O 3 /TiO 2 /Al 2 O 3 (ATA) dielectric thin films prepared by atomic layer deposition are investigated. The structural properties and chemical states in the interfacial layer are analyzed with varying the annealing temperature. The dielectric constant and leakage current are affected by the formation of Al 2 O 3 -TiO 2 composite and interfacial layer including SiO x in the interface by the annealing. The transformation of interfacial layer at the interface of the ATA/Si substrate due to the annealing is a critical point to apply ATA thin films as gate dielectric layers.

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JO - Applied Surface Science

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Kim CE, Yun I. Effects of the interfacial layer on electrical characteristics of Al ₂ O ₃ /TiO ₂ /Al ₂ O ₃ thin films for gate dielectrics Applied Surface Science. 2012 Jan 15;258(7):3089-3093. doi: 10.1016/j.apsusc.2011.11.043

Effects of the interfacial layer on electrical characteristics of Al ₂ O ₃ /TiO ₂ /Al ₂ O ₃ thin films for gate dielectrics

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