Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs

M. Luysberg; H. Sohn; A. Prasad; P. Specht; Z. Liliental-Weber; E. R. Weber; J. Gebauer; R. Krause-Rehberg

doi:10.1063/1.366723

Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs

M. Luysberg, H. Sohn, A. Prasad, P. Specht, Z. Liliental-Weber, E. R. Weber, J. Gebauer, R. Krause-Rehberg

Department of Materials Science and Engineering

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108 Citations (Scopus)

Abstract

The controlled incorporation of excess As into GaAs grown by molecular beam epitaxy at low growth temperatures (LT-GaAs) is explored. The substrate temperature and the As/Ga flux ratio were systematically varied to investigate the influence of growth parameters on the formation of native defects and structural properties. Near infrared absorption, magnetic circular dichroism of absorption, and slow positron annihilation were applied to determine point defect concentrations of As antisites (As_Ga) and Ga vacancies (V_Ga). Structural properties of as-grown and annealed LT-GaAs layers were investigated by x-ray diffraction and transmission electron microscopy. In a well defined parameter range the lattice expansion of the LT-GaAs layers correlates with the amount of As_Ga. The V_Ga acceptor concentration can quantitatively account for the ionization of the As_Ga donors.

Original language	English
Pages (from-to)	561-566
Number of pages	6
Journal	Journal of Applied Physics
Volume	83
Issue number	1
DOIs	https://doi.org/10.1063/1.366723
Publication status	Published - 1998 Jan 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.366723

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abstract = "The controlled incorporation of excess As into GaAs grown by molecular beam epitaxy at low growth temperatures (LT-GaAs) is explored. The substrate temperature and the As/Ga flux ratio were systematically varied to investigate the influence of growth parameters on the formation of native defects and structural properties. Near infrared absorption, magnetic circular dichroism of absorption, and slow positron annihilation were applied to determine point defect concentrations of As antisites (AsGa) and Ga vacancies (VGa). Structural properties of as-grown and annealed LT-GaAs layers were investigated by x-ray diffraction and transmission electron microscopy. In a well defined parameter range the lattice expansion of the LT-GaAs layers correlates with the amount of AsGa. The VGa acceptor concentration can quantitatively account for the ionization of the AsGa donors.",

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T1 - Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs

AU - Luysberg, M.

AU - Sohn, H.

AU - Prasad, A.

AU - Specht, P.

AU - Liliental-Weber, Z.

AU - Weber, E. R.

AU - Gebauer, J.

AU - Krause-Rehberg, R.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The controlled incorporation of excess As into GaAs grown by molecular beam epitaxy at low growth temperatures (LT-GaAs) is explored. The substrate temperature and the As/Ga flux ratio were systematically varied to investigate the influence of growth parameters on the formation of native defects and structural properties. Near infrared absorption, magnetic circular dichroism of absorption, and slow positron annihilation were applied to determine point defect concentrations of As antisites (AsGa) and Ga vacancies (VGa). Structural properties of as-grown and annealed LT-GaAs layers were investigated by x-ray diffraction and transmission electron microscopy. In a well defined parameter range the lattice expansion of the LT-GaAs layers correlates with the amount of AsGa. The VGa acceptor concentration can quantitatively account for the ionization of the AsGa donors.

AB - The controlled incorporation of excess As into GaAs grown by molecular beam epitaxy at low growth temperatures (LT-GaAs) is explored. The substrate temperature and the As/Ga flux ratio were systematically varied to investigate the influence of growth parameters on the formation of native defects and structural properties. Near infrared absorption, magnetic circular dichroism of absorption, and slow positron annihilation were applied to determine point defect concentrations of As antisites (AsGa) and Ga vacancies (VGa). Structural properties of as-grown and annealed LT-GaAs layers were investigated by x-ray diffraction and transmission electron microscopy. In a well defined parameter range the lattice expansion of the LT-GaAs layers correlates with the amount of AsGa. The VGa acceptor concentration can quantitatively account for the ionization of the AsGa donors.

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Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs

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