Effects of the channel thickness on the structural and electrical characteristics of room-temperature fabricated ZnO thin-film transistors

Byeong Yun Oh; Min Chang Jeong; Moon Ho Ham; Jae Min Myoung

doi:10.1088/0268-1242/22/6/004

Effects of the channel thickness on the structural and electrical characteristics of room-temperature fabricated ZnO thin-film transistors

Byeong Yun Oh, Min Chang Jeong, Moon Ho Ham, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

85 Citations (Scopus)

Abstract

We report the fabrication and characteristics of ZnO thin-film transistors (TFTs) having different channel thicknesses. The ZnO films were deposited as active channel layers on SiO₂/p-Si substrates by rf magnetron sputtering at room temperature. Effects of the channel thickness on the structural and electrical properties of ZnO TFTs using a bottom-gate configuration were investigated. The crystalline quality and channel conductance of the ZnO films were enhanced as the channel thickness increased. The ZnO TFT with the optimized channel thickness exhibited enhancement mode characteristics with the threshold voltage of 9.9 V, the on-to-off current ratio of ∼10 ⁵ and the field-effect mobility of 0.1 cm² V^-1 s^-1. This research implies that ZnO TFTs produced by a simple and low-cost technique could be applicable to electronic devices.

Original language	English
Article number	004
Pages (from-to)	608-612
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	22
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/22/6/004
Publication status	Published - 2007 Jun 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Cite this

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abstract = "We report the fabrication and characteristics of ZnO thin-film transistors (TFTs) having different channel thicknesses. The ZnO films were deposited as active channel layers on SiO2/p-Si substrates by rf magnetron sputtering at room temperature. Effects of the channel thickness on the structural and electrical properties of ZnO TFTs using a bottom-gate configuration were investigated. The crystalline quality and channel conductance of the ZnO films were enhanced as the channel thickness increased. The ZnO TFT with the optimized channel thickness exhibited enhancement mode characteristics with the threshold voltage of 9.9 V, the on-to-off current ratio of ∼10 5 and the field-effect mobility of 0.1 cm2 V-1 s-1. This research implies that ZnO TFTs produced by a simple and low-cost technique could be applicable to electronic devices.",

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AU - Oh, Byeong Yun

AU - Jeong, Min Chang

AU - Ham, Moon Ho

AU - Myoung, Jae Min

PY - 2007/6/1

Y1 - 2007/6/1

N2 - We report the fabrication and characteristics of ZnO thin-film transistors (TFTs) having different channel thicknesses. The ZnO films were deposited as active channel layers on SiO2/p-Si substrates by rf magnetron sputtering at room temperature. Effects of the channel thickness on the structural and electrical properties of ZnO TFTs using a bottom-gate configuration were investigated. The crystalline quality and channel conductance of the ZnO films were enhanced as the channel thickness increased. The ZnO TFT with the optimized channel thickness exhibited enhancement mode characteristics with the threshold voltage of 9.9 V, the on-to-off current ratio of ∼10 5 and the field-effect mobility of 0.1 cm2 V-1 s-1. This research implies that ZnO TFTs produced by a simple and low-cost technique could be applicable to electronic devices.

AB - We report the fabrication and characteristics of ZnO thin-film transistors (TFTs) having different channel thicknesses. The ZnO films were deposited as active channel layers on SiO2/p-Si substrates by rf magnetron sputtering at room temperature. Effects of the channel thickness on the structural and electrical properties of ZnO TFTs using a bottom-gate configuration were investigated. The crystalline quality and channel conductance of the ZnO films were enhanced as the channel thickness increased. The ZnO TFT with the optimized channel thickness exhibited enhancement mode characteristics with the threshold voltage of 9.9 V, the on-to-off current ratio of ∼10 5 and the field-effect mobility of 0.1 cm2 V-1 s-1. This research implies that ZnO TFTs produced by a simple and low-cost technique could be applicable to electronic devices.

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Effects of the channel thickness on the structural and electrical characteristics of room-temperature fabricated ZnO thin-film transistors

Abstract

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