Effects of surface terminal bonds and microstructure of SiO2 aerogel films on dry etching

Seok Joo Wang; Hyung Ho Park; Geun Young Yeom; Sang Hoon Hyun

doi:10.1016/S0169-4332(00)00703-0

Effects of surface terminal bonds and microstructure of SiO₂ aerogel films on dry etching

Seok Joo Wang, Hyung Ho Park, Geun Young Yeom, Sang Hoon Hyun

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The effects of microstructure and surface terminal bonds of SiO₂ aerogel films on dry etching were investigated using Ar, SF₆, and C₂F₆ plasma gases. With Ar plasma etching, physical effect of ion bombardment on porous film was found. In residue-free SF₆ plasma etching, reactive etchant transport and high-mass ion bombardment were observed. With C₂F₆ plasma etching, fluorocarbon residue layer was revealed to maintain surface morphology as acting a barrier to radical transport and ion bombardment. An etching of 450 °C-annealed SiO₂ aerogel showed that a dense surface induced the decrease in reaction area, inhibition of etchant transport, and then uniform etching.

Original language	English
Pages (from-to)	457-462
Number of pages	6
Journal	Applied Surface Science
Volume	169-170
DOIs	https://doi.org/10.1016/S0169-4332(00)00703-0
Publication status	Published - 2001 Jan 15

Bibliographical note

Funding Information:
The authors of this paper would like to thank the Samsung Electronics Company for its support of this research.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(00)00703-0

Cite this

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title = "Effects of surface terminal bonds and microstructure of SiO2 aerogel films on dry etching",

abstract = "The effects of microstructure and surface terminal bonds of SiO2 aerogel films on dry etching were investigated using Ar, SF6, and C2F6 plasma gases. With Ar plasma etching, physical effect of ion bombardment on porous film was found. In residue-free SF6 plasma etching, reactive etchant transport and high-mass ion bombardment were observed. With C2F6 plasma etching, fluorocarbon residue layer was revealed to maintain surface morphology as acting a barrier to radical transport and ion bombardment. An etching of 450 °C-annealed SiO2 aerogel showed that a dense surface induced the decrease in reaction area, inhibition of etchant transport, and then uniform etching.",

author = "Wang, {Seok Joo} and Park, {Hyung Ho} and Yeom, {Geun Young} and Hyun, {Sang Hoon}",

note = "Funding Information: The authors of this paper would like to thank the Samsung Electronics Company for its support of this research. ",

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T1 - Effects of surface terminal bonds and microstructure of SiO2 aerogel films on dry etching

AU - Wang, Seok Joo

AU - Park, Hyung Ho

AU - Yeom, Geun Young

AU - Hyun, Sang Hoon

N1 - Funding Information: The authors of this paper would like to thank the Samsung Electronics Company for its support of this research.

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Y1 - 2001/1/15

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AB - The effects of microstructure and surface terminal bonds of SiO2 aerogel films on dry etching were investigated using Ar, SF6, and C2F6 plasma gases. With Ar plasma etching, physical effect of ion bombardment on porous film was found. In residue-free SF6 plasma etching, reactive etchant transport and high-mass ion bombardment were observed. With C2F6 plasma etching, fluorocarbon residue layer was revealed to maintain surface morphology as acting a barrier to radical transport and ion bombardment. An etching of 450 °C-annealed SiO2 aerogel showed that a dense surface induced the decrease in reaction area, inhibition of etchant transport, and then uniform etching.

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