Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple-quantum-well blue light-emitting diodes

Chul Huh, Sang Woo Kim, Hyun Soo Kim, Hyun Min Kim, Hyunsang Hwang, Seong Ju Park

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)

Abstract

The results of the sulfur treatment of multiple-quantum-well (MQW) light-emitting diodes (LEDs) with (NH4)2S and (NH4)2S+t-C4H9OH solutions prior to the deposition of a light-transmitting p-electrode metal are presented. The room-temperature I-V curves showed that the forward voltages of MQW LEDs treated with the two sulfur solutions decrease by 0.12 and 0.35 V at 20 mA, respectively, compared to the untreated MQW LED, as the result of an improvement in p-Ohmic contact characteristics. The relative light-output power and external quantum efficiency of MQW LEDs increased by a factor of 1.28 for the (NH4)2S treated sample and 2.23 for the (NH4)2S + t-C4H9OH treated sample compared to the untreated sample. In addition, the reverse leakage current characteristic of MQW LEDs was reduced as a result of sulfur treatment. This can be attributed to the passivation of surface and sidewall damages formed after the dry-etching process for a reliable pattern transfer. The present results indicate that the sulfur treatment greatly improves the electrical and optical performance of MQW LEDs.

Original languageEnglish
Pages (from-to)1766-1768
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number12
DOIs
Publication statusPublished - 2001 Mar 19

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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