Effects of solution-processed Al2O3 gate insulator thickness on IGZO TFTs

Seung Min Song; Jeong Soo Lee; Dong Won Kang; Jang Yeon Kwon; Min Koo Han

Effects of solution-processed Al₂O₃ gate insulator thickness on IGZO TFTs

Seung Min Song, Jeong Soo Lee, Dong Won Kang, Jang Yeon Kwon, Min Koo Han

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We fabricated In-Ga-Zn-O (IGZO) thin film transistors (TFTs) employing solution-processed aluminum oxide (Al₂O₃) gate insulators with various thicknesses from 100 nm to 370 nm. Leakage current density of Al₂O₃ gate insulators decreased exponentially and dielectric constant decreased with increasing insulator thickness. When the thickness of gate insulator was 230 nm, the sputtered IGZO TFT showed 9.00 cm^2/Vs of the saturation mobility and 3.4 V of the threshold voltage.

Original language	English
Title of host publication	Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages	297-300
Number of pages	4
Publication status	Published - 2012
Event	19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan Duration: 2012 Dec 4 → 2012 Dec 7

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Other

Other	19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
Country/Territory	Japan
City	Kyoto
Period	12/12/4 → 12/12/7

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@inproceedings{26db6b31b74047f08579bb1d096e3bae,

title = "Effects of solution-processed Al2O3 gate insulator thickness on IGZO TFTs",

abstract = "We fabricated In-Ga-Zn-O (IGZO) thin film transistors (TFTs) employing solution-processed aluminum oxide (Al2O3) gate insulators with various thicknesses from 100 nm to 370 nm. Leakage current density of Al2O3 gate insulators decreased exponentially and dielectric constant decreased with increasing insulator thickness. When the thickness of gate insulator was 230 nm, the sputtered IGZO TFT showed 9.00 cm2/Vs of the saturation mobility and 3.4 V of the threshold voltage.",

author = "Song, {Seung Min} and Lee, {Jeong Soo} and Kang, {Dong Won} and Kwon, {Jang Yeon} and Han, {Min Koo}",

year = "2012",

language = "English",

isbn = "9781627486521",

series = "Proceedings of the International Display Workshops",

pages = "297--300",

booktitle = "Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012",

note = "19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 ; Conference date: 04-12-2012 Through 07-12-2012",

}

Song, SM, Lee, JS, Kang, DW, Kwon, JY & Han, MK 2012, Effects of solution-processed Al₂O₃ gate insulator thickness on IGZO TFTs. in Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. Proceedings of the International Display Workshops, vol. 1, pp. 297-300, 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012, Kyoto, Japan, 12/12/4.

Effects of solution-processed Al₂O₃ gate insulator thickness on IGZO TFTs. / Song, Seung Min; Lee, Jeong Soo; Kang, Dong Won et al.
Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. 2012. p. 297-300 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effects of solution-processed Al2O3 gate insulator thickness on IGZO TFTs

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AU - Kwon, Jang Yeon

AU - Han, Min Koo

PY - 2012

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N2 - We fabricated In-Ga-Zn-O (IGZO) thin film transistors (TFTs) employing solution-processed aluminum oxide (Al2O3) gate insulators with various thicknesses from 100 nm to 370 nm. Leakage current density of Al2O3 gate insulators decreased exponentially and dielectric constant decreased with increasing insulator thickness. When the thickness of gate insulator was 230 nm, the sputtered IGZO TFT showed 9.00 cm2/Vs of the saturation mobility and 3.4 V of the threshold voltage.

AB - We fabricated In-Ga-Zn-O (IGZO) thin film transistors (TFTs) employing solution-processed aluminum oxide (Al2O3) gate insulators with various thicknesses from 100 nm to 370 nm. Leakage current density of Al2O3 gate insulators decreased exponentially and dielectric constant decreased with increasing insulator thickness. When the thickness of gate insulator was 230 nm, the sputtered IGZO TFT showed 9.00 cm2/Vs of the saturation mobility and 3.4 V of the threshold voltage.

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