Effects of SiO 2 interlayer on electrical properties of Al-doped ZnO films under bending stress

Young Soo Lim; Seul Gi Seo; Bo Bae Kim; Hyoung Seuk Choi; Won Seon Seo; Yong Soo Cho; Hyung Ho Park

doi:10.1007/s13391-012-2006-1

Effects of SiO ₂ interlayer on electrical properties of Al-doped ZnO films under bending stress

Young Soo Lim, Seul Gi Seo, Bo Bae Kim, Hyoung Seuk Choi, Won Seon Seo, Yong Soo Cho, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We report the effects of an SiO ₂ interlayer on the structural and electrical properties of Al-doped ZnO (AZO) films grown on polyimide (PI) substrate. By inserting a SiO ₂ interlayer between the AZO film and the PI substrate, we could control the microstructure of the AZO films. The granule size of the SiO ₂ interlayer was determined strate temperature, and the column width in the AZO film was strongly affected by the initial granule size in the interlayer. In-situ Hall measurement of the AZO films under bending stress was performed for the first time, and flexibility-related electrical properties of the AZO films were discussed.

Original language	English
Pages (from-to)	375-379
Number of pages	5
Journal	Electronic Materials Letters
Volume	8
Issue number	4
DOIs	https://doi.org/10.1007/s13391-012-2006-1
Publication status	Published - 2012 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1007/s13391-012-2006-1

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title = "Effects of SiO 2 interlayer on electrical properties of Al-doped ZnO films under bending stress",

abstract = "We report the effects of an SiO 2 interlayer on the structural and electrical properties of Al-doped ZnO (AZO) films grown on polyimide (PI) substrate. By inserting a SiO 2 interlayer between the AZO film and the PI substrate, we could control the microstructure of the AZO films. The granule size of the SiO 2 interlayer was determined strate temperature, and the column width in the AZO film was strongly affected by the initial granule size in the interlayer. In-situ Hall measurement of the AZO films under bending stress was performed for the first time, and flexibility-related electrical properties of the AZO films were discussed.",

author = "Lim, {Young Soo} and Seo, {Seul Gi} and Kim, {Bo Bae} and Choi, {Hyoung Seuk} and Seo, {Won Seon} and Cho, {Yong Soo} and Park, {Hyung Ho}",

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T1 - Effects of SiO 2 interlayer on electrical properties of Al-doped ZnO films under bending stress

AU - Lim, Young Soo

AU - Seo, Seul Gi

AU - Kim, Bo Bae

AU - Choi, Hyoung Seuk

AU - Seo, Won Seon

AU - Cho, Yong Soo

AU - Park, Hyung Ho

PY - 2012/8

Y1 - 2012/8

N2 - We report the effects of an SiO 2 interlayer on the structural and electrical properties of Al-doped ZnO (AZO) films grown on polyimide (PI) substrate. By inserting a SiO 2 interlayer between the AZO film and the PI substrate, we could control the microstructure of the AZO films. The granule size of the SiO 2 interlayer was determined strate temperature, and the column width in the AZO film was strongly affected by the initial granule size in the interlayer. In-situ Hall measurement of the AZO films under bending stress was performed for the first time, and flexibility-related electrical properties of the AZO films were discussed.

AB - We report the effects of an SiO 2 interlayer on the structural and electrical properties of Al-doped ZnO (AZO) films grown on polyimide (PI) substrate. By inserting a SiO 2 interlayer between the AZO film and the PI substrate, we could control the microstructure of the AZO films. The granule size of the SiO 2 interlayer was determined strate temperature, and the column width in the AZO film was strongly affected by the initial granule size in the interlayer. In-situ Hall measurement of the AZO films under bending stress was performed for the first time, and flexibility-related electrical properties of the AZO films were discussed.

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JO - Electronic Materials Letters

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Effects of SiO ₂ interlayer on electrical properties of Al-doped ZnO films under bending stress

Abstract

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