Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO2 layers

H. B. Kim; T. G. Kim; J. H. Son; C. N. Whang; K. H. Chae; W. S. Lee; S. Im; J. H. Song

doi:10.1063/1.1305909

Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO₂ layers

H. B. Kim, T. G. Kim, J. H. Son, C. N. Whang, K. H. Chae, W. S. Lee, S. Im, J. H. Song

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Si ions were implanted into 100-nm-thick SiO₂ layer thermally grown on crystalline Si at an energy of 55 keV with various doses ranging from 1 × 10¹⁴ to 1 × 10¹⁷ Si/cm² at room temperature. Si ions go through the interface between SiO₂ layer and Si substrate generating defects in SiO₂ layer and Si substrate as well. Defect-related phenomena were characterized by photoluminescence (PL) and electron spin resonance (ESR) measurements. The PL experiment shows that there exists a dose window for a maximum intensity of luminescence related to radiative defects, while the ESR exhibits that nonradiative defects change from E′ centers to P_b centers as the dose increases. It is considered that the intensity is controlled by the density ratio of radiative to nonradiative defects induced by ion implantation.

Original language	English
Pages (from-to)	1851-1854
Number of pages	4
Journal	Journal of Applied Physics
Volume	88
Issue number	4
DOIs	https://doi.org/10.1063/1.1305909
Publication status	Published - 2000 Aug 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.1305909

Cite this

@article{f0ba2af7471d41fc946c0312936fcf74,

title = "Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO2 layers",

abstract = "Si ions were implanted into 100-nm-thick SiO2 layer thermally grown on crystalline Si at an energy of 55 keV with various doses ranging from 1 × 1014 to 1 × 1017 Si/cm2 at room temperature. Si ions go through the interface between SiO2 layer and Si substrate generating defects in SiO2 layer and Si substrate as well. Defect-related phenomena were characterized by photoluminescence (PL) and electron spin resonance (ESR) measurements. The PL experiment shows that there exists a dose window for a maximum intensity of luminescence related to radiative defects, while the ESR exhibits that nonradiative defects change from E′ centers to Pb centers as the dose increases. It is considered that the intensity is controlled by the density ratio of radiative to nonradiative defects induced by ion implantation.",

author = "Kim, {H. B.} and Kim, {T. G.} and Son, {J. H.} and Whang, {C. N.} and Chae, {K. H.} and Lee, {W. S.} and S. Im and Song, {J. H.}",

year = "2000",

month = aug,

day = "15",

doi = "10.1063/1.1305909",

language = "English",

volume = "88",

pages = "1851--1854",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO2 layers

AU - Kim, H. B.

AU - Kim, T. G.

AU - Son, J. H.

AU - Whang, C. N.

AU - Chae, K. H.

AU - Lee, W. S.

AU - Im, S.

AU - Song, J. H.

PY - 2000/8/15

Y1 - 2000/8/15

N2 - Si ions were implanted into 100-nm-thick SiO2 layer thermally grown on crystalline Si at an energy of 55 keV with various doses ranging from 1 × 1014 to 1 × 1017 Si/cm2 at room temperature. Si ions go through the interface between SiO2 layer and Si substrate generating defects in SiO2 layer and Si substrate as well. Defect-related phenomena were characterized by photoluminescence (PL) and electron spin resonance (ESR) measurements. The PL experiment shows that there exists a dose window for a maximum intensity of luminescence related to radiative defects, while the ESR exhibits that nonradiative defects change from E′ centers to Pb centers as the dose increases. It is considered that the intensity is controlled by the density ratio of radiative to nonradiative defects induced by ion implantation.

AB - Si ions were implanted into 100-nm-thick SiO2 layer thermally grown on crystalline Si at an energy of 55 keV with various doses ranging from 1 × 1014 to 1 × 1017 Si/cm2 at room temperature. Si ions go through the interface between SiO2 layer and Si substrate generating defects in SiO2 layer and Si substrate as well. Defect-related phenomena were characterized by photoluminescence (PL) and electron spin resonance (ESR) measurements. The PL experiment shows that there exists a dose window for a maximum intensity of luminescence related to radiative defects, while the ESR exhibits that nonradiative defects change from E′ centers to Pb centers as the dose increases. It is considered that the intensity is controlled by the density ratio of radiative to nonradiative defects induced by ion implantation.

UR - http://www.scopus.com/inward/record.url?scp=0001340146&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001340146&partnerID=8YFLogxK

U2 - 10.1063/1.1305909

DO - 10.1063/1.1305909

M3 - Article

AN - SCOPUS:0001340146

SN - 0021-8979

VL - 88

SP - 1851

EP - 1854

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO₂ layers

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this