Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and N H3

W. J. Lee; M. H. Cho; K. B. Chung; Y. S. Lee; D. C. Kim; S. Y. Choi; U. I. Chung; J. T. Moon

doi:10.1063/1.2955835

Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and N H3

W. J. Lee, M. H. Cho, K. B. Chung, Y. S. Lee, D. C. Kim, S. Y. Choi, U. I. Chung, J. T. Moon

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effects of reoxidation on the band structure of N-incorporated SiON films were investigated as a function of thermal treatment in NO and N H3. Reoxidation-associated changes in band gap and valence band offset of the N-incorporated SiON films prepared by sequential thermal annealing in both NO and N H3 were less than those observed for the nitrided film prepared by thermal annealing in only N H3. The differences in band-alignment characteristics of the nitrided films that resulted from use of different nitridation methods were strongly related to the depth distribution of N and the chemical states of N bonded to Si.

Original language	English
Article number	012901
Journal	Applied Physics Letters
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/1.2955835
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was partially supported by the Joint Program for Industry-Institute of Samsung Electronics, the IT R&D program of MKE/IITA (2008-F-023-01, next generation future device fabricated by using nanojunction), and the Korean Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-357-C00020).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2955835

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title = "Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and N H3",

abstract = "The effects of reoxidation on the band structure of N-incorporated SiON films were investigated as a function of thermal treatment in NO and N H3. Reoxidation-associated changes in band gap and valence band offset of the N-incorporated SiON films prepared by sequential thermal annealing in both NO and N H3 were less than those observed for the nitrided film prepared by thermal annealing in only N H3. The differences in band-alignment characteristics of the nitrided films that resulted from use of different nitridation methods were strongly related to the depth distribution of N and the chemical states of N bonded to Si.",

author = "Lee, {W. J.} and Cho, {M. H.} and Chung, {K. B.} and Lee, {Y. S.} and Kim, {D. C.} and Choi, {S. Y.} and Chung, {U. I.} and Moon, {J. T.}",

note = "Funding Information: This work was partially supported by the Joint Program for Industry-Institute of Samsung Electronics, the IT R&D program of MKE/IITA (2008-F-023-01, next generation future device fabricated by using nanojunction), and the Korean Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-357-C00020).",

year = "2008",

doi = "10.1063/1.2955835",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and N H3

AU - Lee, W. J.

AU - Cho, M. H.

AU - Chung, K. B.

AU - Lee, Y. S.

AU - Kim, D. C.

AU - Choi, S. Y.

AU - Chung, U. I.

AU - Moon, J. T.

N1 - Funding Information: This work was partially supported by the Joint Program for Industry-Institute of Samsung Electronics, the IT R&D program of MKE/IITA (2008-F-023-01, next generation future device fabricated by using nanojunction), and the Korean Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-357-C00020).

PY - 2008

Y1 - 2008

N2 - The effects of reoxidation on the band structure of N-incorporated SiON films were investigated as a function of thermal treatment in NO and N H3. Reoxidation-associated changes in band gap and valence band offset of the N-incorporated SiON films prepared by sequential thermal annealing in both NO and N H3 were less than those observed for the nitrided film prepared by thermal annealing in only N H3. The differences in band-alignment characteristics of the nitrided films that resulted from use of different nitridation methods were strongly related to the depth distribution of N and the chemical states of N bonded to Si.

AB - The effects of reoxidation on the band structure of N-incorporated SiON films were investigated as a function of thermal treatment in NO and N H3. Reoxidation-associated changes in band gap and valence band offset of the N-incorporated SiON films prepared by sequential thermal annealing in both NO and N H3 were less than those observed for the nitrided film prepared by thermal annealing in only N H3. The differences in band-alignment characteristics of the nitrided films that resulted from use of different nitridation methods were strongly related to the depth distribution of N and the chemical states of N bonded to Si.

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Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and N H3

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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