Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films

K. B. Chung; M. H. Cho; U. Hwang; H. J. Kang; D. C. Suh; H. C. Sohn; D. H. Ko; S. H. Kim; H. T. Jeon

doi:10.1063/1.2826271

Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films

K. B. Chung, M. H. Cho, U. Hwang, H. J. Kang, D. C. Suh, H. C. Sohn, D. H. Ko, S. H. Kim, H. T. Jeon

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9 Citations (Scopus)

Abstract

The effects of film composition and postnitridation annealing on band gap and valence band offset were examined in nitrided Hf-silicate films prepared using direct plasma nitridation. Regardless of the composition of Hf-silicate films, the band gap characteristics were similar after direct plasma nitridation (4.5±0.1 eV) and postnitridation annealing (5.6±0.1 eV). The decrease in band gap after direct plasma nitridation was caused by the formation of Si-N and Hf-N bonds, while the recovery of band gap by postnitridation annealing was influenced by the dissociation of unstable Hf-N bonds. The difference in valence band offset was strongly related to the chemical states of Si-N bonds.

Original language	English
Article number	022907
Journal	Applied Physics Letters
Volume	92
Issue number	2
DOIs	https://doi.org/10.1063/1.2826271
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was partially supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 Century Frontier Programs. This work was also supported by Korea Science and Engineering Foundation Grants (R01-2004-000-10882-0).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2826271

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@article{5d103c7efef847b2afb5bee643e97be0,

title = "Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films",

abstract = "The effects of film composition and postnitridation annealing on band gap and valence band offset were examined in nitrided Hf-silicate films prepared using direct plasma nitridation. Regardless of the composition of Hf-silicate films, the band gap characteristics were similar after direct plasma nitridation (4.5±0.1 eV) and postnitridation annealing (5.6±0.1 eV). The decrease in band gap after direct plasma nitridation was caused by the formation of Si-N and Hf-N bonds, while the recovery of band gap by postnitridation annealing was influenced by the dissociation of unstable Hf-N bonds. The difference in valence band offset was strongly related to the chemical states of Si-N bonds.",

author = "Chung, {K. B.} and Cho, {M. H.} and U. Hwang and Kang, {H. J.} and Suh, {D. C.} and Sohn, {H. C.} and Ko, {D. H.} and Kim, {S. H.} and Jeon, {H. T.}",

note = "Funding Information: This work was partially supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 Century Frontier Programs. This work was also supported by Korea Science and Engineering Foundation Grants (R01-2004-000-10882-0).",

year = "2008",

doi = "10.1063/1.2826271",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films

AU - Chung, K. B.

AU - Cho, M. H.

AU - Hwang, U.

AU - Kang, H. J.

AU - Suh, D. C.

AU - Sohn, H. C.

AU - Ko, D. H.

AU - Kim, S. H.

AU - Jeon, H. T.

N1 - Funding Information: This work was partially supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 Century Frontier Programs. This work was also supported by Korea Science and Engineering Foundation Grants (R01-2004-000-10882-0).

PY - 2008

Y1 - 2008

N2 - The effects of film composition and postnitridation annealing on band gap and valence band offset were examined in nitrided Hf-silicate films prepared using direct plasma nitridation. Regardless of the composition of Hf-silicate films, the band gap characteristics were similar after direct plasma nitridation (4.5±0.1 eV) and postnitridation annealing (5.6±0.1 eV). The decrease in band gap after direct plasma nitridation was caused by the formation of Si-N and Hf-N bonds, while the recovery of band gap by postnitridation annealing was influenced by the dissociation of unstable Hf-N bonds. The difference in valence band offset was strongly related to the chemical states of Si-N bonds.

AB - The effects of film composition and postnitridation annealing on band gap and valence band offset were examined in nitrided Hf-silicate films prepared using direct plasma nitridation. Regardless of the composition of Hf-silicate films, the band gap characteristics were similar after direct plasma nitridation (4.5±0.1 eV) and postnitridation annealing (5.6±0.1 eV). The decrease in band gap after direct plasma nitridation was caused by the formation of Si-N and Hf-N bonds, while the recovery of band gap by postnitridation annealing was influenced by the dissociation of unstable Hf-N bonds. The difference in valence band offset was strongly related to the chemical states of Si-N bonds.

UR - http://www.scopus.com/inward/record.url?scp=38349138529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38349138529&partnerID=8YFLogxK

U2 - 10.1063/1.2826271

DO - 10.1063/1.2826271

M3 - Article

AN - SCOPUS:38349138529

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022907

ER -

Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films

Abstract

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