Abstract
ZnO thin films on (1 0 0) p-type silicon substrates have been deposited by pulsed laser deposition technique. In order to investigate the effect of post-annealing treatment with oxygen on the optical property of ZnO thin films, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been observed to be improved which results in increasing ultra-violet (UV) emission intensity of photoluminescence (PL).
| Original language | English |
|---|---|
| Pages (from-to) | 327-330 |
| Number of pages | 4 |
| Journal | Optical Materials |
| Volume | 17 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2001 Jun |
| Event | Optoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France Duration: 2000 May 30 → 2000 Jun 2 |
Bibliographical note
Funding Information:This work was supported by the development program for the exemplary schools in information and communications from the Ministry of Information and Communication (MIC).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Computer Science(all)
- Atomic and Molecular Physics, and Optics
- Spectroscopy
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering