Effects of post-annealing treatment on the light emission properties of ZnO thin films on Si

Sang Hyuck Bae, Sang Yeol Lee, Hyun Young Kim, Seongil Im

Research output: Contribution to journalConference articlepeer-review

60 Citations (Scopus)


ZnO thin films on (1 0 0) p-type silicon substrates have been deposited by pulsed laser deposition technique. In order to investigate the effect of post-annealing treatment with oxygen on the optical property of ZnO thin films, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been observed to be improved which results in increasing ultra-violet (UV) emission intensity of photoluminescence (PL).

Original languageEnglish
Pages (from-to)327-330
Number of pages4
JournalOptical Materials
Issue number1-2
Publication statusPublished - 2001 Jun
EventOptoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France
Duration: 2000 May 302000 Jun 2

Bibliographical note

Funding Information:
This work was supported by the development program for the exemplary schools in information and communications from the Ministry of Information and Communication (MIC).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering


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