Effects of phase of underlying W film on chemical vapor deposited-W film growth and applications to contact-plug and bit line processes for memory devices

Material Science

• Nucleation 100%
• Vapor 28%
• Liquid Films 19%
• Devices 9%
• Electron Microscopy 9%
• Thin Films 4%
• Contact Resistance 4%
• Film Growth 4%

Physics

• Vapor 28%
• Electrical Properties 9%
• Electrical Resistivity 9%
• Grain Size 9%
• Memory 9%
• Thin Films 4%
• Transmission Electron Microscopy 4%
• Capacitance 4%
• Tungsten 4%
• Plugs 4%
• Phase Equilibrium 4%
• Shapes 4%
• Growth 4%
• Utilization 4%
• Metal 4%

Pharmacology, Toxicology and Pharmaceutical Science

• Tungsten 4%
• Metal 4%
• Transmission Electron Microscopy 4%