Abstract
Cobalt silicide emitters showed the enhanced emission properties in I-V characteristics and long-term current stability, compared to bare silicon emitters. They are mainly caused by the increased of emission area and the formation of chemically stable surface of silicide emitters. Detailed results about the effects of phase and thickness of cobalt silicide on electron emission are discussed.
| Original language | English |
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| Pages | 314-315 |
| Number of pages | 2 |
| Publication status | Published - 1998 |
| Event | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: 1998 Jul 19 → 1998 Jul 24 |
Other
| Other | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC |
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| City | Asheville, NC, USA |
| Period | 98/7/19 → 98/7/24 |
All Science Journal Classification (ASJC) codes
- Surfaces and Interfaces