Abstract
The effect of oxygen concentration on the properties of Al-doped ZnO (AZO) transparent conductive films has been investigated on the films deposited by pulsed DC magnetron sputtering using a cylindrical ZnO target containing 2 wt% Al. AZO films were deposited at 230 °C to the thickness of about 1000 nm and the oxygen concentration was controlled by varying the O2/Ar supply ratio from 0 to 0.167. With the increasing O2/Ar ratio, crystallinity of the AZO films deteriorated while the film surface became smooth. Accompanying this, electrical properties also deteriorated significantly. When the O2/Ar ratios were 0 and 0.033, the AZO films showed metallic conduction behavior with the electrical resistivity in the mid 10-4 Ω cm range. However, when the ratios were 0.100 and 0.167, the films showed poor electrical conduction behavior similar to semiconductors as deduced from the transmittance behavior. Spectroscopic analysis showed that such deteriorating properties are due to the formation of condensed oxide group through the reaction between excess oxygen and dopant aluminum.
| Original language | English |
|---|---|
| Pages (from-to) | 997-1001 |
| Number of pages | 5 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 16 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2013 Jun |
Bibliographical note
Funding Information:This work was supported by the Technology Innovation Program (Industrial Strategic Technology Development Program, 10040741, Development of the Low Damage Sputtering Source for TCO Layers) funded by the Ministry of Knowledge Economy (MKE, Korea) . M.S. Lee and M.H. Ham acknowledge support by the WCU Program through an NRF Grant ( R31-10026 ) of MEST.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering