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Effects of nitrogen doping on device characteristics of InSnO thin film transistor
Chang Eun Kim,
Ilgu Yun
Department of Electrical and Electronic Engineering
Research output
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Contribution to journal
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Article
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peer-review
26
Citations (Scopus)
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Engineering
Thin-Film Transistor
100%
Characteristics
75%
Deposition Process
50%
Electric Potential
25%
Current Ratio
25%
Crystallinity
25%
Channel Layer
25%
Interface Trap
25%
Channel Device
25%
Performance
25%
Density
25%
Physics
Nitrogen
100%
Electric Potential
25%
Field Effect
25%
Crystallinity
25%
Performance
25%
Mobility
25%
Material Science
Devices
50%