Abstract
The effects of nitrogen doping on the performance of InSnO thin film transistor were investigated. When the nitrogen was doped in the InSnO channel, device characteristics such as turn-on voltage, subthreshold swing, field effect mobility, and on/off current ratio were enhanced. The N 2 insertion in the deposition process decreased the density of the interface trap states and enhanced the crystallinity of the InSnO channel layer. These results indicate that device characteristics can be improved by nitrogen doping in the deposition process.
| Original language | English |
|---|---|
| Article number | 013501 |
| Journal | Applied Physics Letters |
| Volume | 100 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2012 Jan 2 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)