Effects of nitrogen addition on the structure and field emission properties of amorphous carbon

Eung Joon Chi; Jae Yeob Shim; Hong Koo Baik

doi:10.1116/1.590628

Effects of nitrogen addition on the structure and field emission properties of amorphous carbon

Eung Joon Chi, Jae Yeob Shim, Hong Koo Baik

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The films of amorphous carbon with different amounts of incorporated nitrogen are deposited by helical resonator plasma enhanced chemical vapor deposition using CH₄, Ar, and N₂ gas mixtures. As the nitrogen content in the films increases, the optical band gap and sp³ bond fraction decreased. The higher field emission current and the lower turn-on voltage are obtained from the sample of the higher nitrogen content. The calculated emission barrier heights for a-C:N (5/5) and (10/0) are 0.76 and 0.70 times that for a-C, respectively. The increase of the conducting part of the films and the role of nitrogen as an electrical donor are responsible for the enhanced field emission.

Original language	English
Pages (from-to)	728-730
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	17
Issue number	2
DOIs	https://doi.org/10.1116/1.590628
Publication status	Published - 1999

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.590628

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abstract = "The films of amorphous carbon with different amounts of incorporated nitrogen are deposited by helical resonator plasma enhanced chemical vapor deposition using CH4, Ar, and N2 gas mixtures. As the nitrogen content in the films increases, the optical band gap and sp3 bond fraction decreased. The higher field emission current and the lower turn-on voltage are obtained from the sample of the higher nitrogen content. The calculated emission barrier heights for a-C:N (5/5) and (10/0) are 0.76 and 0.70 times that for a-C, respectively. The increase of the conducting part of the films and the role of nitrogen as an electrical donor are responsible for the enhanced field emission.",

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AU - Chi, Eung Joon

AU - Shim, Jae Yeob

AU - Baik, Hong Koo

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N2 - The films of amorphous carbon with different amounts of incorporated nitrogen are deposited by helical resonator plasma enhanced chemical vapor deposition using CH4, Ar, and N2 gas mixtures. As the nitrogen content in the films increases, the optical band gap and sp3 bond fraction decreased. The higher field emission current and the lower turn-on voltage are obtained from the sample of the higher nitrogen content. The calculated emission barrier heights for a-C:N (5/5) and (10/0) are 0.76 and 0.70 times that for a-C, respectively. The increase of the conducting part of the films and the role of nitrogen as an electrical donor are responsible for the enhanced field emission.

AB - The films of amorphous carbon with different amounts of incorporated nitrogen are deposited by helical resonator plasma enhanced chemical vapor deposition using CH4, Ar, and N2 gas mixtures. As the nitrogen content in the films increases, the optical band gap and sp3 bond fraction decreased. The higher field emission current and the lower turn-on voltage are obtained from the sample of the higher nitrogen content. The calculated emission barrier heights for a-C:N (5/5) and (10/0) are 0.76 and 0.70 times that for a-C, respectively. The increase of the conducting part of the films and the role of nitrogen as an electrical donor are responsible for the enhanced field emission.

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Effects of nitrogen addition on the structure and field emission properties of amorphous carbon

Abstract

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