Abstract
The films of amorphous carbon with different amount of incorporated nitrogen are deposited by helical resonator plasma enhanced chemical vapor deposition using CH4, Ar, and N2 gas mixture. As the increase of nitrogen in the films, the optical band gap and sp3 bond fraction decreased. The higher field emission current and the lower turn-on voltage are obtained from the sample of the higher nitrogen content. The increase of the conducting part of the films and the role of nitrogen as an electrical donor are responsible for the enhanced field emission.
| Original language | English |
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| Pages | 204-205 |
| Number of pages | 2 |
| Publication status | Published - 1998 |
| Event | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: 1998 Jul 19 → 1998 Jul 24 |
Other
| Other | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC |
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| City | Asheville, NC, USA |
| Period | 98/7/19 → 98/7/24 |
All Science Journal Classification (ASJC) codes
- Surfaces and Interfaces