TY - JOUR
T1 - Effects of metal electrode on the electrical performance of amorphous In-Ga-Zn-O thin film transistor
AU - Yim, Jung Ryoul
AU - Jung, Sung Yup
AU - Yeon, Han Wool
AU - Kwon, Jang Yoen
AU - Lee, Young Joo
AU - Lee, Je Hun
AU - Joo, Young Chang
PY - 2012/1
Y1 - 2012/1
N2 - Effects of metal electrode on the electrical performance of amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT) have been studied. Electrical performances and interface stability between Mo, Al, and Cu electrode and a-IGZO semiconductor have been investigated before and after air-annealing. No inter-diffusion and interfacial reaction has been observed between Mo and a-IGZO and the turn-on voltage of the Mo electrode TFT was 0 V after annealing. As for Al, Al oxide was formed at the interface, and the number of conduction electrons in a-IGZO increased. Thus, a negative turn-on voltage was observed after air-annealing. As for Cu, Cu diffused into a-IGZO during air-annealing and acted as an acceptor. Therefore the a-IGZO TFT with a Cu electrode had a positive turn-on voltage and sub-threshold slope increased after airannealing. These results indicate that the transistor performance can be affected by the metal types due to inter-diffusion or interfacial reaction between metal and a-IGZO.
AB - Effects of metal electrode on the electrical performance of amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT) have been studied. Electrical performances and interface stability between Mo, Al, and Cu electrode and a-IGZO semiconductor have been investigated before and after air-annealing. No inter-diffusion and interfacial reaction has been observed between Mo and a-IGZO and the turn-on voltage of the Mo electrode TFT was 0 V after annealing. As for Al, Al oxide was formed at the interface, and the number of conduction electrons in a-IGZO increased. Thus, a negative turn-on voltage was observed after air-annealing. As for Cu, Cu diffused into a-IGZO during air-annealing and acted as an acceptor. Therefore the a-IGZO TFT with a Cu electrode had a positive turn-on voltage and sub-threshold slope increased after airannealing. These results indicate that the transistor performance can be affected by the metal types due to inter-diffusion or interfacial reaction between metal and a-IGZO.
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U2 - 10.1143/JJAP.51.011401
DO - 10.1143/JJAP.51.011401
M3 - Article
AN - SCOPUS:84862919840
SN - 0021-4922
VL - 51
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 1
M1 - 011401
ER -