Effects of Li doping on the structural and electrical properties of solution-processed ZnO films for high-performance thin-film transistors

Kyuhyun Bang; Gi Cheol Son; Myungwoo Son; Ji Hyun Jun; Heeju An; Kwang Hyeon Baik; Jae Min Myoung; Moon Ho Ham

doi:10.1016/j.jallcom.2017.12.186

Effects of Li doping on the structural and electrical properties of solution-processed ZnO films for high-performance thin-film transistors

Kyuhyun Bang, Gi Cheol Son, Myungwoo Son, Ji Hyun Jun, Heeju An, Kwang Hyeon Baik, Jae Min Myoung, Moon Ho Ham

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We report the structural and electrical properties of Li-doped ZnO (LZO) films, which are spin-coated via a simple solution process using Zn and Li precursor solutions. The Li doping improves the crystallinity of the ZnO films, and the LZO films exhibit a relatively dense and smooth surface morphology compared to that of the undoped ZnO films. Back-gated LZO thin-film transistors (TFTs) are fabricated onto a heavily p-doped Si substrate with a SiO₂ gate dielectric, and operated in enhancement mode. In the case of the LZO TFT with a Li doping concentration of 0.50 mol%, the highest field-effect mobility of 5.18 cm² V⁻¹ s⁻¹ is obtained; the on/off current ratio and subthreshold swing are 10⁷ and 1.2 V dec⁻¹, respectively. These results demonstrate that Li doping can effectively modulate the structural and electrical properties of ZnO-based films, facilitating the fabrication of LZO TFTs with enhanced performance.

Original language	English
Pages (from-to)	41-46
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	739
DOIs	https://doi.org/10.1016/j.jallcom.2017.12.186
Publication status	Published - 2018 Mar 30

Bibliographical note

Funding Information:
This work was supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT ( 2017M3D1A1040828 ), Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2015R1D1A1A01058982 ), Nano Material Technology Development Program of the National Research Foundation of Korea (NRF) by the Ministry of Science and ICT ( 2016M3A7B4909942 ), and the GIST Research Institute (GRI). H. An and J.M. Myoung acknowledge the financial support from the LG Display Academic Industrial Cooperation Program.

Publisher Copyright:
© 2017 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2017.12.186

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title = "Effects of Li doping on the structural and electrical properties of solution-processed ZnO films for high-performance thin-film transistors",

abstract = "We report the structural and electrical properties of Li-doped ZnO (LZO) films, which are spin-coated via a simple solution process using Zn and Li precursor solutions. The Li doping improves the crystallinity of the ZnO films, and the LZO films exhibit a relatively dense and smooth surface morphology compared to that of the undoped ZnO films. Back-gated LZO thin-film transistors (TFTs) are fabricated onto a heavily p-doped Si substrate with a SiO2 gate dielectric, and operated in enhancement mode. In the case of the LZO TFT with a Li doping concentration of 0.50 mol%, the highest field-effect mobility of 5.18 cm2 V−1 s−1 is obtained; the on/off current ratio and subthreshold swing are 107 and 1.2 V dec−1, respectively. These results demonstrate that Li doping can effectively modulate the structural and electrical properties of ZnO-based films, facilitating the fabrication of LZO TFTs with enhanced performance.",

author = "Kyuhyun Bang and Son, {Gi Cheol} and Myungwoo Son and Jun, {Ji Hyun} and Heeju An and Baik, {Kwang Hyeon} and Myoung, {Jae Min} and Ham, {Moon Ho}",

note = "Funding Information: This work was supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT ( 2017M3D1A1040828 ), Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2015R1D1A1A01058982 ), Nano Material Technology Development Program of the National Research Foundation of Korea (NRF) by the Ministry of Science and ICT ( 2016M3A7B4909942 ), and the GIST Research Institute (GRI). H. An and J.M. Myoung acknowledge the financial support from the LG Display Academic Industrial Cooperation Program. Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

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T1 - Effects of Li doping on the structural and electrical properties of solution-processed ZnO films for high-performance thin-film transistors

AU - Bang, Kyuhyun

AU - Son, Gi Cheol

AU - Son, Myungwoo

AU - Jun, Ji Hyun

AU - An, Heeju

AU - Baik, Kwang Hyeon

AU - Myoung, Jae Min

AU - Ham, Moon Ho

N1 - Funding Information: This work was supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT ( 2017M3D1A1040828 ), Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2015R1D1A1A01058982 ), Nano Material Technology Development Program of the National Research Foundation of Korea (NRF) by the Ministry of Science and ICT ( 2016M3A7B4909942 ), and the GIST Research Institute (GRI). H. An and J.M. Myoung acknowledge the financial support from the LG Display Academic Industrial Cooperation Program. Publisher Copyright: © 2017 Elsevier B.V.

PY - 2018/3/30

Y1 - 2018/3/30

N2 - We report the structural and electrical properties of Li-doped ZnO (LZO) films, which are spin-coated via a simple solution process using Zn and Li precursor solutions. The Li doping improves the crystallinity of the ZnO films, and the LZO films exhibit a relatively dense and smooth surface morphology compared to that of the undoped ZnO films. Back-gated LZO thin-film transistors (TFTs) are fabricated onto a heavily p-doped Si substrate with a SiO2 gate dielectric, and operated in enhancement mode. In the case of the LZO TFT with a Li doping concentration of 0.50 mol%, the highest field-effect mobility of 5.18 cm2 V−1 s−1 is obtained; the on/off current ratio and subthreshold swing are 107 and 1.2 V dec−1, respectively. These results demonstrate that Li doping can effectively modulate the structural and electrical properties of ZnO-based films, facilitating the fabrication of LZO TFTs with enhanced performance.

AB - We report the structural and electrical properties of Li-doped ZnO (LZO) films, which are spin-coated via a simple solution process using Zn and Li precursor solutions. The Li doping improves the crystallinity of the ZnO films, and the LZO films exhibit a relatively dense and smooth surface morphology compared to that of the undoped ZnO films. Back-gated LZO thin-film transistors (TFTs) are fabricated onto a heavily p-doped Si substrate with a SiO2 gate dielectric, and operated in enhancement mode. In the case of the LZO TFT with a Li doping concentration of 0.50 mol%, the highest field-effect mobility of 5.18 cm2 V−1 s−1 is obtained; the on/off current ratio and subthreshold swing are 107 and 1.2 V dec−1, respectively. These results demonstrate that Li doping can effectively modulate the structural and electrical properties of ZnO-based films, facilitating the fabrication of LZO TFTs with enhanced performance.

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Effects of Li doping on the structural and electrical properties of solution-processed ZnO films for high-performance thin-film transistors

Abstract

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