Effects of ion implantation on the electrical properties of Au/n-Si Schottky diodes

M. H. Joo; K. H. Lee; J. H. Song; S. Im

doi:10.1016/S0921-5107(99)00379-7

Effects of ion implantation on the electrical properties of Au/n-Si Schottky diodes

M. H. Joo, K. H. Lee, J. H. Song, S. Im

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

B and Si ion implantation for edge termination of Au Schottky diodes have been studied to enhance the breakdown voltages of the diodes. B ions of 30 keV were implanted with three doses of 1×10¹³, 1×10¹⁴, and 1×10¹⁵ B cm^-2 to achieve edge-terminated Schottky diodes. For Si implantation, the energy of 70 keV was used with the same doses. Au Schottky diode implanted with a dose of 1×10¹³ B cm^-2 shows the best results of the edge termination: a reverse leakage of about 1.5×10^-3 A cm^-2 at the breakdown voltage, 386 V. Unimplanted Schottky diode shows only 216 V at the breakdown event. Si implantation and high dose B implantation result in early breakdown and high current leakage compared to the low dose B implantation. It is concluded that the early breakdown and the high leakage are closely related to the density of ion-beam-induced defects near the end-of-range (EOR) region.

Original language	English
Pages (from-to)	224-228
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	71
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(99)00379-7
Publication status	Published - 2000 Feb 14
Event	The European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors - Strasbourg, France Duration: 1999 Jun 1 → 1999 Jun 4

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Effects of ion implantation on the electrical properties of Au/n-Si Schottky diodes",

abstract = "B and Si ion implantation for edge termination of Au Schottky diodes have been studied to enhance the breakdown voltages of the diodes. B ions of 30 keV were implanted with three doses of 1×1013, 1×1014, and 1×1015 B cm-2 to achieve edge-terminated Schottky diodes. For Si implantation, the energy of 70 keV was used with the same doses. Au Schottky diode implanted with a dose of 1×1013 B cm-2 shows the best results of the edge termination: a reverse leakage of about 1.5×10-3 A cm-2 at the breakdown voltage, 386 V. Unimplanted Schottky diode shows only 216 V at the breakdown event. Si implantation and high dose B implantation result in early breakdown and high current leakage compared to the low dose B implantation. It is concluded that the early breakdown and the high leakage are closely related to the density of ion-beam-induced defects near the end-of-range (EOR) region.",

author = "Joo, {M. H.} and Lee, {K. H.} and Song, {J. H.} and S. Im",

year = "2000",

month = feb,

day = "14",

doi = "10.1016/S0921-5107(99)00379-7",

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pages = "224--228",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

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number = "1-3",

note = "The European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors ; Conference date: 01-06-1999 Through 04-06-1999",

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TY - JOUR

T1 - Effects of ion implantation on the electrical properties of Au/n-Si Schottky diodes

AU - Joo, M. H.

AU - Lee, K. H.

AU - Song, J. H.

AU - Im, S.

PY - 2000/2/14

Y1 - 2000/2/14

N2 - B and Si ion implantation for edge termination of Au Schottky diodes have been studied to enhance the breakdown voltages of the diodes. B ions of 30 keV were implanted with three doses of 1×1013, 1×1014, and 1×1015 B cm-2 to achieve edge-terminated Schottky diodes. For Si implantation, the energy of 70 keV was used with the same doses. Au Schottky diode implanted with a dose of 1×1013 B cm-2 shows the best results of the edge termination: a reverse leakage of about 1.5×10-3 A cm-2 at the breakdown voltage, 386 V. Unimplanted Schottky diode shows only 216 V at the breakdown event. Si implantation and high dose B implantation result in early breakdown and high current leakage compared to the low dose B implantation. It is concluded that the early breakdown and the high leakage are closely related to the density of ion-beam-induced defects near the end-of-range (EOR) region.

AB - B and Si ion implantation for edge termination of Au Schottky diodes have been studied to enhance the breakdown voltages of the diodes. B ions of 30 keV were implanted with three doses of 1×1013, 1×1014, and 1×1015 B cm-2 to achieve edge-terminated Schottky diodes. For Si implantation, the energy of 70 keV was used with the same doses. Au Schottky diode implanted with a dose of 1×1013 B cm-2 shows the best results of the edge termination: a reverse leakage of about 1.5×10-3 A cm-2 at the breakdown voltage, 386 V. Unimplanted Schottky diode shows only 216 V at the breakdown event. Si implantation and high dose B implantation result in early breakdown and high current leakage compared to the low dose B implantation. It is concluded that the early breakdown and the high leakage are closely related to the density of ion-beam-induced defects near the end-of-range (EOR) region.

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DO - 10.1016/S0921-5107(99)00379-7

M3 - Conference article

AN - SCOPUS:0033897007

SN - 0921-5107

VL - 71

SP - 224

EP - 228

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

T2 - The European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors

Y2 - 1 June 1999 through 4 June 1999

ER -

Effects of ion implantation on the electrical properties of Au/n-Si Schottky diodes

Abstract

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