Effects of interface Al2O3 passivation layer for High-k HfO2 on GaAs

Dong Chan Suh, Young Dae Cho, Dae Hong Ko, Yongshik Lee, Kwun Bum Chung, Mann Ho Cho

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13 Citations (Scopus)


The effects of Al2 O3 passivation, formed by atomic layer deposition (ALD) at the interface of Hf O2 /GaAs, were investigated by high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and capacitance-voltage (C-V) measurements. The results indicate that the incorporation of Ga by diffusion into the Hf O 2 layer is reduced by the Al2 O3 passivation at the Hf O2 /GaAs interface. The Ga and As contents of the Hf O 2 films decreased with increasing amount of interfacial Al 2 O3 passivation, while the capacitance value decreased. The Al2 O3 phase optimized at five ALD cycles effectively suppressed the formation of interfacial oxide and subsequently improved the C-V electrical properties.

Original languageEnglish
Pages (from-to)H63-H65
JournalElectrochemical and Solid-State Letters
Issue number2
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • General Chemical Engineering
  • General Materials Science
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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