Effects of hole doping on magnetic and lattice excitations in Sr 2 Ir 1 - X Ru x O 4 (x = 0 - 0.2)

A. Glamazda, W. J. Lee, K. Y. Choi, P. Lemmens, H. Y. Choi, N. Lee, Y. J. Choi

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23 Citations (Scopus)


Raman scattering is employed to explore the effects of hole doping in single crystals of Sr2Ir1-xRuxO4 (x=0, 0.01, 0.03, 0.05, 0.1, and 0.2). Introducing a few percentages of holes has a strong impact on magnetic excitations and lattice dynamics. With increasing x the well structured two-magnon continuum turns into diffusive magnetic scattering. Furthermore one- and two-phonon scatterings are rapidly suppressed. Remarkably, the two Ir(Ru)-O-Ir(Ru) bond angle modes with different Ir(Ru)O6 octahedral rotations coexist and compete upon hole doping. This is ascribed to the difference of electronic properties between Ir4+ and Ru4+ ions. The doping and temperature dependence of the bond angle modes suggests that an electronically phase separated state develops upon Ru doping.

Original languageEnglish
Article number104406
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number10
Publication statusPublished - 2014 Mar 10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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